中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4521-4523.doi: 10.1088/1674-1056/18/10/070
周庆莉1, 赵卉2, 赵嵩卿3, 吕志清4, 赵昆5
ü Zhi-Qing(吕志清)a)b), Zhao Kun(赵昆)a)b)c)† , Zhao Hui(赵卉)c), Zhao Song-Qing(赵嵩卿)a), and Zhou Qing-Li(周庆莉)d)
摘要: Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20~ns duration. The response time and full width at half maximum of the photovoltage pulse are 6~ns and 19~ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.
中图分类号: (Photoconduction and photovoltaic effects)