中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4521-4523.doi: 10.1088/1674-1056/18/10/070

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Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

周庆莉1, 赵卉2, 赵嵩卿3, 吕志清4, 赵昆5   

  1. (1)Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China; (2)Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249, China; (3)Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China; (4)Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China;State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, China; (5)Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China;State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, China;Department of Materials Science and Engineering,
  • 收稿日期:2009-03-07 修回日期:2009-05-26 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project supported by NCET (Grant No NCET-08-0841), the National Natural Science Foundation of China (Grant Nos 50672132 and 60778034), RFDP (Grant No 200804250006), Key Program of Ministry of Education, China (Grant No 107020), and Beijng Natural Science

Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

ü Zhi-Qing(吕志清)a)b), Zhao Kun(赵昆)a)b)c)† , Zhao Hui(赵卉)c), Zhao Song-Qing(赵嵩卿)a), and Zhou Qing-Li(周庆莉)d)   

  1. a Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China; b State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, China; c Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249, China; d Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China 
  • Received:2009-03-07 Revised:2009-05-26 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project supported by NCET (Grant No NCET-08-0841), the National Natural Science Foundation of China (Grant Nos 50672132 and 60778034), RFDP (Grant No 200804250006), Key Program of Ministry of Education, China (Grant No 107020), and Beijng Natural Science

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摘要： Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20~ns duration. The response time and full width at half maximum of the photovoltage pulse are 6~ns and 19~ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.

Abstract: Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.

Key words: photovoltaic effect, LaSrAlO4 single crystal

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 61.82.Ms (Insulators) 72.80.Sk (Insulators) 85.60.Gz (Photodetectors (including infrared and CCD detectors))