中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107304-107304.doi: 10.1088/1674-1056/24/10/107304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

王小波a b, 李勇c, 闫玲玲a, 李新建a   

  1. a Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
    b College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
    c Department of Physics, Pingdingshan University, Pingdingshan 467000, China
  • 收稿日期:2015-03-25 修回日期:2015-04-25 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176044).

Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

Wang Xiao-Bo (王小波)a b, Li Yong (李勇)c, Yan Ling-Ling (闫玲玲)a, Li Xin-Jian (李新建)a   

  1. a Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
    b College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
    c Department of Physics, Pingdingshan University, Pingdingshan 467000, China
  • Received:2015-03-25 Revised:2015-04-25 Online:2015-10-05 Published:2015-10-05
  • Contact: Li Xin-Jian E-mail:lixj@zzu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176044).

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摘要： A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ～ 10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.

关键词: GaN/Si-NPA, heterojunction, rectification, electroluminescence (EL)

Abstract: A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ～ 10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.

Key words: GaN/Si-NPA, heterojunction, rectification, electroluminescence (EL)

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.40.Ei (Rectification) 78.60.Fi (Electroluminescence) 78.55.Cr (III-V semiconductors)