中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107304-107304.doi: 10.1088/1674-1056/24/10/107304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
王小波a b, 李勇c, 闫玲玲a, 李新建a
- a Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
b College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
c Department of Physics, Pingdingshan University, Pingdingshan 467000, China
Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
Wang Xiao-Bo (王小波)a b, Li Yong (李勇)c, Yan Ling-Ling (闫玲玲)a, Li Xin-Jian (李新建)a
- a Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
b College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
c Department of Physics, Pingdingshan University, Pingdingshan 467000, China
摘要： A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ～ 10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
- 73.40.Kp