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Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Impact of STI indium implantation on reliability of gate oxide[J]. 中国物理B, 2022, 31(2): 28505-028505. |
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Shao-Yang Li(李绍洋), Liang-Liang Wang(王亮亮), Dan Wu(吴丹), Jin You(游金), Yue Wang(王玥), Jia-Shun Zhang(张家顺), Xiao-Jie Yin(尹小杰), Jun-Ming An(安俊明), and Yuan-Da Wu(吴远大). High efficiency, small size, and large bandwidth vertical interlayer waveguide coupler[J]. 中国物理B, 2022, 31(2): 24203-024203. |
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Changjian Xie(解长健), Xihua Zou (邹喜华), Fang Zou(邹放), Lianshan Yan(闫连山), Wei Pan(潘炜), and Yong Zhang(张永). A 32-channel 100 GHz wavelength division multiplexer by interleaving two silicon arrayed waveguide gratings[J]. 中国物理B, 2021, 30(12): 120703-120703. |
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刘先程, 马佳俊, 谢红云, 马佩, 陈亮, 郭敏, 张万荣. Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor[J]. 中国物理B, 2020, 29(2): 28501-028501. |
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戴丽华, 毕大炜, 胡志远, 刘小年, 张梦映, 张正选, 邹世昌. Research on the radiation hardened SOI devices with single-step Si ion implantation[J]. 中国物理B, 2018, 27(4): 48503-048503. |
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张梦映, 胡志远, 毕大炜, 戴丽华, 张正选. Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation[J]. 中国物理B, 2018, 27(2): 28501-028501. |
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邵福会, 张一, 苏向斌, 谢圣文, 尚金铭, 赵云昊, 蔡晨元, 车仁超, 徐应强, 倪海桥, 牛智川. 1.3-μm InAs/GaAs quantum dots grown on Si substrates[J]. 中国物理B, 2018, 27(12): 128105-128105. |
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解鑫, 毕大伟, 胡志远, 朱慧龙, 张梦映, 张正选, 邹世昌. Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET[J]. 中国物理B, 2018, 27(12): 128501-128501. |
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袁配, 王玥, 吴远大, 安俊明, 胡雄伟. 16-channel dual-tuning wavelength division multiplexer/demultiplexer[J]. 中国物理B, 2018, 27(12): 124208-124208. |
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郑齐文, 崔江维, 刘梦新, 苏丹丹, 周航, 马腾, 余学峰, 陆妩, 郭旗, 赵发展. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. 中国物理B, 2017, 26(9): 96103-096103. |
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樊双, 胡志远, 张正选, 宁冰旭, 毕大炜, 戴丽华, 张梦映, 张乐情. Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs[J]. 中国物理B, 2017, 26(3): 36103-036103. |
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邓林, 李德钊, 刘子龙, 孟英昊, 郭小男, 田永辉. Tunable optical filter using second-order micro-ring resonator[J]. 中国物理B, 2017, 26(2): 24209-024209. |
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李威, 郑直, 汪志刚, 李平, 付晓君, 何峥嵘, 刘凡, 杨丰, 向凡, 刘伦才. A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer[J]. 中国物理B, 2017, 26(1): 17701-017701. |
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武华, 李冲, 李智勇, 郭霞. Apodized grating coupler using fully-etched nanostructures[J]. 中国物理B, 2016, 25(8): 84212-084212. |
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解冰清, 李博, 毕津顺, 卜建辉, 吴驰, 李彬鸿, 韩郑生, 罗家俊. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices[J]. 中国物理B, 2016, 25(7): 78501-078501. |