Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

doi:10.1088/1674-1056/23/9/096101

›› 2014, Vol. 23 ›› Issue (9): 96101-096101.doi: 10.1088/1674-1056/23/9/096101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

刘静^{a b}, 王嘉鸥^a, 伊福廷^a, 吴蕊^a, 张念^{a b}, 奎热西^a

a Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2013-12-18 修回日期:2014-03-05 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50972144).

Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

Liu Jing (刘静)^{a b}, Wang Jia-Ou (王嘉鸥)^a, Yi Fu-Ting (伊福廷)^a, Wu Rui (吴蕊)^a, Zhang Nian (张念)^{a b}, Ibrahim Kurash (奎热西)^a

a Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2013-12-18 Revised:2014-03-05 Online:2014-09-15 Published:2014-09-15
Contact: Yi Fu-Ting E-mail:yift@ihep.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50972144).

摘要/Abstract

摘要： Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl₃) at 870℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.

关键词: X-ray photoelectron spectroscopy (XPS), photoelectric characteristic, P-N junction, silicon nanopillar

Abstract: Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl₃) at 870℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.

Key words: X-ray photoelectron spectroscopy (XPS), photoelectric characteristic, P-N junction, silicon nanopillar

中图分类号: (X-ray diffraction)

61.05.cp

62.23.Hj (Nanowires)

刘静, 王嘉鸥, 伊福廷, 吴蕊, 张念, 奎热西. Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy[J]. , 2014, 23(9): 96101-096101.

Liu Jing (刘静), Wang Jia-Ou (王嘉鸥), Yi Fu-Ting (伊福廷), Wu Rui (吴蕊), Zhang Nian (张念), Ibrahim Kurash (奎热西). Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy[J]. Chin. Phys. B, 2014, 23(9): 96101-096101.

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Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

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