Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

doi:10.1088/1674-1056/25/4/047306

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47306-047306.doi: 10.1088/1674-1056/25/4/047306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

Pan Yang(杨盼), Wen-Jie Chen(谌文杰), Jiao Wang(王娇), Zhao-Wen Yan(闫兆文), Jian-Li Qiao(乔坚栗), Tong Xiao(肖彤), Xin Wang(王欣), Zheng-Peng Pang(庞正鹏), Jian-Hong Yang(杨建红)

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

收稿日期:2015-09-23 修回日期:2015-12-07 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Received:2015-09-23 Revised:2015-12-07 Online:2016-04-05 Published:2016-04-05
Contact: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

摘要/Abstract

摘要： The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation-recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equations are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO₂ thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance (MR) can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.

关键词: magnetoresistance, p-n junction, newton iteration

Abstract: The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation-recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equations are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO₂ thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance (MR) can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.

Key words: magnetoresistance, p-n junction, newton iteration

中图分类号: (Magnetoresistance)

73.43.Qt

75.40.Mg (Numerical simulation studies) 02.60.Cb (Numerical simulation; solution of equations)

杨盼, 谌文杰, 王娇, 闫兆文, 乔坚栗, 肖彤, 王欣, 庞正鹏, 杨建红. Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction[J]. 中国物理B, 2016, 25(4): 47306-047306.

Pan Yang(杨盼), Wen-Jie Chen(谌文杰), Jiao Wang(王娇), Zhao-Wen Yan(闫兆文), Jian-Li Qiao(乔坚栗), Tong Xiao(肖彤), Xin Wang(王欣), Zheng-Peng Pang(庞正鹏), Jian-Hong Yang(杨建红). Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction[J]. Chin. Phys. B, 2016, 25(4): 47306-047306.

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Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

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