Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

doi:10.1088/1674-1056/23/7/077201

›› 2014, Vol. 23 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/23/7/077201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

陈思哲, 盛况

College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China

收稿日期:2013-11-09 修回日期:2014-01-21 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Projects supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050401) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 51225701).

Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

Chen Si-Zhe (陈思哲), Sheng Kuang (盛况)

College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China

Received:2013-11-09 Revised:2014-01-21 Online:2014-07-15 Published:2014-07-15
Contact: Sheng Kuang E-mail:shengk@zju.edu.cn
About author:72.80.Ey; 85.30.Tv
Supported by:
Projects supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050401) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 51225701).

摘要/Abstract

摘要： We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8× 10¹⁵ cm^-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ · cm², while the normally-off device shows an on-state resistance of 3.85 mΩ ·cm². Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.

关键词: silicon carbide, trenched-and-implanted vertical junction field-effect transistor, normally-on device, normally-off device

Abstract: We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8× 10¹⁵ cm^-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ · cm², while the normally-off device shows an on-state resistance of 3.85 mΩ ·cm². Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.

Key words: silicon carbide, trenched-and-implanted vertical junction field-effect transistor, normally-on device, normally-off device

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

85.30.Tv (Field effect devices)

陈思哲, 盛况. Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors[J]. , 2014, 23(7): 77201-077201.

Chen Si-Zhe (陈思哲), Sheng Kuang (盛况). Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors[J]. Chin. Phys. B, 2014, 23(7): 77201-077201.

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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

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