Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
陈思哲, 盛况
Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
Chen Si-Zhe (陈思哲), Sheng Kuang (盛况)
Chin. Phys. B . 2014, (7): 77201 -077201 .  DOI: 10.1088/1674-1056/23/7/077201