Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

doi:10.1088/1674-1056/22/7/076701

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76701-076701.doi: 10.1088/1674-1056/22/7/076701

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor

刘琛, 张玉明, 张义门, 吕红亮

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2012-08-27 修回日期:2013-03-12 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the National Defense Advance Research Foundation, China(Grant No. 9140A08030511DZ111), and the National Defense Advance Research Project, China (Grant No. 51308030306).

Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor

Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮)

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2012-08-27 Revised:2013-03-12 Online:2013-06-01 Published:2013-06-01
Contact: Liu Chen E-mail:lcxd710071@126.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the National Defense Advance Research Foundation, China(Grant No. 9140A08030511DZ111), and the National Defense Advance Research Project, China (Grant No. 51308030306).

摘要/Abstract

摘要： The interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

关键词: gate dielectric, Terman method, interface trap density

Abstract: The interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

Key words: gate dielectric, Terman method, interface trap density

中图分类号: (Interfaces)

67.30.hp

68.37.-d (Microscopy of surfaces, interfaces, and thin films) 61.72.uj (III-V and II-VI semiconductors)

刘琛, 张玉明, 张义门, 吕红亮. Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor[J]. 中国物理B, 2013, 22(7): 76701-076701.

Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮). Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor[J]. Chin. Phys. B, 2013, 22(7): 76701-076701.

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Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor

Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor

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