中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76701-076701.doi: 10.1088/1674-1056/22/7/076701
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
刘琛, 张玉明, 张义门, 吕红亮
Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮)
摘要: The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.
中图分类号: (Interfaces)