中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67702-067702.doi: 10.1088/1674-1056/22/6/067702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

汤振杰a, 李荣b, 殷江c   

  1. a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
    c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2012-09-12 修回日期:2012-12-06 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021), the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124), the State Key Program for Basic Research of China (Grant No. 2010CB934201), and the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004).

The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

Tang Zhen-Jie (汤振杰)a, Li Rong (李荣)b, Yin Jiang (殷江)c   

  1. a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
    c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2012-09-12 Revised:2012-12-06 Online:2013-05-01 Published:2013-05-01
  • Contact: Tang Zhen-Jie E-mail:zjtang@hotmail.com
  • Supported by:
    Project supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021), the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124), the State Key Program for Basic Research of China (Grant No. 2010CB934201), and the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004).

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摘要： ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO2)0.6(SiO2)0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of ～ 25% over a period of ten years (determined by extrapolating the charge loss curve measured experimentally), even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.

关键词: charge storage, ZrO2 nanocrystallites, atomic layer deposition, pulse laser deposition

Abstract: ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO2)0.6(SiO2)0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of ～ 25% over a period of ten years (determined by extrapolating the charge loss curve measured experimentally), even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.

Key words: charge storage, ZrO2 nanocrystallites, atomic layer deposition, pulse laser deposition

中图分类号:  (For silicon electronics)

  • 77.55.df
81.20.Fw (Sol-gel processing, precipitation) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))