Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

doi:10.1088/1674-1056/25/12/128104

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128104-128104.doi: 10.1088/1674-1056/25/12/128104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition

Li-Xin Tian(田丽欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平)

Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2016-03-25 修回日期:2016-08-08 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Feng Zhang E-mail:fzhang@semi.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition

Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2016-03-25 Revised:2016-08-08 Online:2016-12-05 Published:2016-12-05
Contact: Feng Zhang E-mail:fzhang@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

摘要/Abstract

摘要：

Annealing effects on structural and compositional performances of Al₂O₃ thin films on 4H-SiC substrates are studied comprehensively. The Al₂O₃ films are grown by atomic layer deposition through using trimethylaluminum and H₂O as precursors at 300℃, and annealed at various temperatures in ambient N₂ for 1 min. The Al₂O₃ film transits from amorphous phase to crystalline phase as annealing temperature increases from 750℃ to 768℃. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.

关键词: atomic layer deposition, annealing, transition, 4H-SiC

Abstract:

Key words: atomic layer deposition, annealing, transition, 4H-SiC

中图分类号: (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

81.40.Ef

68.55.-a (Thin film structure and morphology)

田丽欣, 张峰, 申占伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平. Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition[J]. 中国物理B, 2016, 25(12): 128104-128104.

Li-Xin Tian(田丽欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition[J]. Chin. Phys. B, 2016, 25(12): 128104-128104.

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Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition

Influences of annealing on structural and compositional properties of Al₂O₃ thin films grown on 4H-SiC by atomic layer deposition

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