Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs

doi:10.1088/1674-1056/25/9/097202

中国物理B ›› 2016, Vol. 25 ›› Issue (9): 97202-097202.doi: 10.1088/1674-1056/25/9/097202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs

Jun Chen(陈俊), Jiabing Lv(吕加兵)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

收稿日期:2016-02-22 修回日期:2016-04-29 出版日期:2016-09-05 发布日期:2016-09-05
通讯作者: Jun Chen E-mail:junchen@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61307044), the National Basic Research Program of China (Grant No. 2012CB619200), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130321), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133201120009), the Open Project of Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences (IIMDKFJJ-15-06), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China, and the Research Innovation Program for College Graduates of Jiangsu Province, China (Grant No. SJLX15-0600).

Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs

Jun Chen(陈俊), Jiabing Lv(吕加兵)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Received:2016-02-22 Revised:2016-04-29 Online:2016-09-05 Published:2016-09-05
Contact: Jun Chen E-mail:junchen@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61307044), the National Basic Research Program of China (Grant No. 2012CB619200), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130321), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133201120009), the Open Project of Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences (IIMDKFJJ-15-06), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China, and the Research Innovation Program for College Graduates of Jiangsu Province, China (Grant No. SJLX15-0600).

摘要/Abstract

摘要： We report our results on the modeling of the spectral response of the near-infrared (NIR) lattice-matched p-n-p In_0.53Ga_0.47As/InP heterojunction phototransistors (HPTs). The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary conditions. In addition, a detailed optical-power absorption profile is constructed for the device modeling. The calculated responsivity is in good agreement with the measured one for the incident radiation at 980 nm, 1310 nm, and 1550 nm. Furthermore, the variation in the responsivity of the device with the base region width is analyzed.

关键词: spectral response, near-infrared heterojunction phototransistors, responsivity

Abstract: We report our results on the modeling of the spectral response of the near-infrared (NIR) lattice-matched p-n-p In_0.53Ga_0.47As/InP heterojunction phototransistors (HPTs). The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary conditions. In addition, a detailed optical-power absorption profile is constructed for the device modeling. The calculated responsivity is in good agreement with the measured one for the incident radiation at 980 nm, 1310 nm, and 1550 nm. Furthermore, the variation in the responsivity of the device with the base region width is analyzed.

Key words: spectral response, near-infrared heterojunction phototransistors, responsivity

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors) 78.20.Bh (Theory, models, and numerical simulation)

陈俊, 吕加兵. Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs[J]. 中国物理B, 2016, 25(9): 97202-097202.

Jun Chen(陈俊), Jiabing Lv(吕加兵). Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs[J]. Chin. Phys. B, 2016, 25(9): 97202-097202.

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Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs

Spectral response modeling and analysis of p-n-p In0.53Ga_0.47As/InP HPTs

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