中国物理B ›› 2021, Vol. 30 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/abff26

所属专题： SPECIAL TOPIC — Optical field manipulation

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Anisotropic photoresponse of layered rhenium disulfide synaptic transistors

Chunhua An(安春华)1,†, Zhihao Xu(徐志昊)1,2,†, Jing Zhang(张璟)1, Enxiu Wu(武恩秀)1, Xinli Ma(马新莉)1, Yidi Pang(庞奕荻)1, Xiao Fu(付晓)2, Xiaodong Hu(胡晓东)1, Dong Sun(孙栋)3, Jinshui Miao(苗金水)2,‡, and Jing Liu(刘晶)1,§   

  1. 1 State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China;
    2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
    3 International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2021-03-21 修回日期:2021-05-06 接受日期:2021-05-08 出版日期:2021-07-16 发布日期:2021-08-02
  • 通讯作者: Jinshui Miao, Jing Liu E-mail:jsmiao@mail.sitp.ac.cn;jingliu_1112@tju.edu.cn

Anisotropic photoresponse of layered rhenium disulfide synaptic transistors

Chunhua An(安春华)1,†, Zhihao Xu(徐志昊)1,2,†, Jing Zhang(张璟)1, Enxiu Wu(武恩秀)1, Xinli Ma(马新莉)1, Yidi Pang(庞奕荻)1, Xiao Fu(付晓)2, Xiaodong Hu(胡晓东)1, Dong Sun(孙栋)3, Jinshui Miao(苗金水)2,‡, and Jing Liu(刘晶)1,§   

  1. 1 State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China;
    2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
    3 International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • Received:2021-03-21 Revised:2021-05-06 Accepted:2021-05-08 Online:2021-07-16 Published:2021-08-02
  • Contact: Jinshui Miao, Jing Liu E-mail:jsmiao@mail.sitp.ac.cn;jingliu_1112@tju.edu.cn

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摘要： Layered ReS2 with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS2 are still very limited. Here, we studied the anisotropic photoresponse of layered ReS2 phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS2 transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS2 interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS2 transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.

关键词: ReS2, in-plane anisotropy, anisotropic photoresponse, phototransistor

Abstract: Layered ReS2 with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS2 are still very limited. Here, we studied the anisotropic photoresponse of layered ReS2 phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS2 transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS2 interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS2 transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.

Key words: ReS2, in-plane anisotropy, anisotropic photoresponse, phototransistor

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
84.32.Ff (Conductors, resistors (including thermistors, varistors, and photoresistors)) 85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)