High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response

doi:10.1088/1674-1056/ac6dc1

中国物理B ›› 2022, Vol. 31 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/ac6dc1

High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response

Wen Deng(邓文), Li-Sheng Wang(汪礼胜)^†, Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔)^‡

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

收稿日期:2022-01-30 修回日期:2022-05-05 接受日期:2022-05-07 出版日期:2022-11-11 发布日期:2022-11-19
通讯作者: Li-Sheng Wang, Feng-Xiang Chen E-mail:wang_lesson@whut.edu.cn;phonixchen79@whut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51702245) and the Fundamental Research Funds for the Central Universities (Grant No. WUT2021III065JC).

High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response

Wen Deng(邓文), Li-Sheng Wang(汪礼胜)^†, Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔)^‡

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

Received:2022-01-30 Revised:2022-05-05 Accepted:2022-05-07 Online:2022-11-11 Published:2022-11-19
Contact: Li-Sheng Wang, Feng-Xiang Chen E-mail:wang_lesson@whut.edu.cn;phonixchen79@whut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51702245) and the Fundamental Research Funds for the Central Universities (Grant No. WUT2021III065JC).

摘要/Abstract

摘要： Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.

关键词: HfSe₂/MoS₂ heterostructure, phototransistor, high-sensitive, broad-spectral response

Abstract: Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.

Key words: HfSe₂/MoS₂ heterostructure, phototransistor, high-sensitive, broad-spectral response

中图分类号: (Photodiodes; phototransistors; photoresistors)

85.60.Dw

85.60.Gz (Photodetectors (including infrared and CCD detectors)) 78.40.Fy (Semiconductors) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔). High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response[J]. 中国物理B, 2022, 31(12): 128502-128502.

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High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response

High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response

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