Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors

doi:10.1088/1674-1056/21/6/067201

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67201-067201.doi: 10.1088/1674-1056/21/6/067201

Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

冀东^a, 刘冰^a, 吕燕伍^a, 邹杪^b, 范博龄^a

a. School of Science, Beijing Jiaotong University, Beijing 100044, China;
b. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2011-08-03 修回日期:2011-11-28 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976070) and the Excellent Science and Technology Innovation Program from Beijing Jiaotong University, China.

Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

Ji Dong(冀东)^a), Liu Bing(刘冰)^a), Lu Yan-Wu(吕燕伍)^a)†, Zou Miao(邹杪)^b), and Fan Bo-Ling(范博龄)^a)

a. School of Science, Beijing Jiaotong University, Beijing 100044, China;
b. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China

Received:2011-08-03 Revised:2011-11-28 Online:2012-05-01 Published:2012-05-01
Contact: Lü Yan-Wu E-mail:ywlu@bjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976070) and the Excellent Science and Technology Innovation Program from Beijing Jiaotong University, China.

摘要/Abstract

摘要： The J-V characteristics of Al_tGa_1-tN/GaN high electron mobility transistors (HEMTs) are investigated and simulated using the self-consistent solution of the Schrödinger and Poisson equations for a two-dimensional electron gas (2DEG) in a triangular potential well with the Al mole fraction t=0.3 as an example. Using a simple analytical model, the electronic drift velocity in a 2DEG channel is obtained. It is found that the current density through the 2DEG channel is on the order of 10¹³ A/m² within a very narrow region (about 5 nm). For a current density of 7 ? 10¹³ A/m² passing through the 2DEG channel with a 2DEG density of above 1.2 ? 10¹⁷ m^-2 under a drain voltage V_ds=1.5 V at room temperature, the barrier thickness L_b should be more than 10 nm and the gate bias must be higher than 2 V.

关键词: two-dimensional electron gas, high electron mobility transistor, heterointerface, nitride semiconductor

Abstract: The J-V characteristics of Al_tGa_1-tN/GaN high electron mobility transistors (HEMTs) are investigated and simulated using the self-consistent solution of the Schrödinger and Poisson equations for a two-dimensional electron gas (2DEG) in a triangular potential well with the Al mole fraction t=0.3 as an example. Using a simple analytical model, the electronic drift velocity in a 2DEG channel is obtained. It is found that the current density through the 2DEG channel is on the order of 10¹³ A/m² within a very narrow region (about 5 nm). For a current density of 7 $\times$ 10¹³ A/m² passing through the 2DEG channel with a 2DEG density of above 1.2 $\times$ 10¹⁷ m^-2 under a drain voltage V_ds=1.5 V at room temperature, the barrier thickness L_b should be more than 10 nm and the gate bias must be higher than 2 V.

Key words: two-dimensional electron gas, high electron mobility transistor, heterointerface, nitride semiconductor

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.-c (Electronic transport in interface structures) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

冀东, 刘冰, 吕燕伍, 邹杪, 范博龄. Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors[J]. 中国物理B, 2012, 21(6): 67201-067201.

Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) . Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors[J]. Chin. Phys. B, 2012, 21(6): 67201-067201.

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Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

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