中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67103-067103.doi: 10.1088/1674-1056/21/6/067103
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
杜玉杰a b, 常本康a, 王洪刚a, 张俊举a, 王美山c
Du Yu-Jie(杜玉杰)a)b), Chang Ben-Kang(常本康)a)†, Wang Hong-Gang(王洪刚)a), Zhang Jun-Ju(张俊举)a), and Wang Mei-Shan(王美山) c)
摘要: The adsorption characteristics of Cs on GaN (0001) and GaN (0001) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN (0001) surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN (0001) surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.
中图分类号: (III-V semiconductors)