中国物理B ›› 2012, Vol. 21 ›› Issue (5): 57305-057305.doi: 10.1088/1674-1056/21/5/057305

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The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

马飞,刘红侠,匡潜玮,樊继斌   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-10-17 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097), the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China (Grant No. 708083), and the Fundamental Research Funds for the Central Universities, China (Grant No. 20110203110012).

The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

Ma Fei(马飞)†, Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌)   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2011-10-17 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097), the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China (Grant No. 708083), and the Fundamental Research Funds for the Central Universities, China (Grant No. 20110203110012).

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摘要： The fringing-induced barrier lowering (FIBL) effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator. An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect. The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance. Based on equivalent capacitance theory, the influences of channel length, junction depth, gate/lightly doped drain (LDD) overlap length, spacer material and spacer width on FIBL is thoroughly investigated. A stack gate dielectric is presented to suppress the FIBL effect.

关键词: high-k gate dielectric, fringing-induced barrier lowering, stack gate dielectric, MOSFET

Abstract: The fringing-induced barrier lowering (FIBL) effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator. An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect. The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance. Based on equivalent capacitance theory, the influences of channel length, junction depth, gate/lightly doped drain (LDD) overlap length, spacer material and spacer width on FIBL is thoroughly investigated. A stack gate dielectric is presented to suppress the FIBL effect.

Key words: high-k gate dielectric, fringing-induced barrier lowering, stack gate dielectric, MOSFET

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
73.61.Ng (Insulators)