中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/20/9/097305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

蒲颜, 庞磊, 陈晓娟, 袁婷婷, 罗卫军, 刘新宇   

  1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2010-02-15 修回日期:2011-05-30 出版日期:2011-09-15 发布日期:2011-09-15

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

Pu Yan(蒲颜), Pang Lei(庞磊), Chen Xiao-Juan(陈晓娟), Yuan Ting-Ting(袁婷婷), Luo Wei-Jun(罗卫军), and Liu Xin-Yu(刘新宇)   

  1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2010-02-15 Revised:2011-05-30 Online:2011-09-15 Published:2011-09-15

摘要: The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.

Abstract: The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.

Key words: dispersion effects, pulsed current voltage measurement, trap, self-heating

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 79.60.Jv (Interfaces; heterostructures; nanostructures)