中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/20/8/087304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
李惟一, 茹国平, 蒋玉龙, 阮刚
Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平)†, Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚)
摘要: An improved structure of Schottky rectifier, called a trapezoid mesa trench metal—oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS), is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I—V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3 × 10-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.
中图分类号: (Surface double layers, Schottky barriers, and work functions)