中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/20/8/087304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics

李惟一, 茹国平, 蒋玉龙, 阮刚   

  1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2010-12-07 修回日期:2011-04-28 出版日期:2011-08-15 发布日期:2011-08-15
  • 基金资助:
    Project supported by the International Research Training Group “Materials and Concepts for Interconnects and Nanosystems”.

Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics

Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平)†, Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚)   

  1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2010-12-07 Revised:2011-04-28 Online:2011-08-15 Published:2011-08-15
  • Supported by:
    Project supported by the International Research Training Group “Materials and Concepts for Interconnects and Nanosystems”.

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摘要： An improved structure of Schottky rectifier, called a trapezoid mesa trench metal—oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS), is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I—V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3 × 10-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.

Abstract: An improved structure of Schottky rectifier, called a trapezoid mesa trench metal—oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS), is proposed and studied by two-dimensional numerical simulations. Both forward and especially better reverse I—V characteristics, including lower leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given. With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3 × 10-6 A/cm2, which is 26% smaller than that of the optimized TMBS. The relationship between optimized breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.

Key words: Schottky rectifier, pinch-off effect, breakdown, power device

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
73.40.Ei (Rectification) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.De (Semiconductor-device characterization, design, and modeling)