Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

doi:10.1088/1674-1056/20/3/038102

中国物理B ›› 2011, Vol. 20 ›› Issue (3): 38102-038102.doi: 10.1088/1674-1056/20/3/038102

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

S.V Babu¹, 刘波², 宋志棠², 刘卫丽², 封松林², 王良咏³, 黄丕成⁴

(1)Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing, Clarkson University, Potsdam New York 13699, USA; (2)Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (3)Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing, Clarkson University, Potsdam New York 13699, USA; (4)Praxair Electronics,1555 Main Street, Indianapolis 46224, USA

收稿日期:2010-07-06 修回日期:2010-12-01 出版日期:2011-03-15 发布日期:2011-03-15
基金资助:
Project supported by the Center for Advanced Materials Processing (CAMP) at Clarkson University, the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-3), the National Basic Research Program of China (Grant Nos. 2007CB935400, 201

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Wang Liang-Yong(王良咏)^a)c)†, Liu Bo(刘波)^a), Song Zhi-Tang(宋志棠)^a), Liu Wei-Li(刘卫丽)^a), Feng Song-Lin(封松林)^a), David Huang(黄丕成)^b), and S.V Babu^c)

^a Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; ^b Praxair Electronics, 1555 Main Street, Indianapolis 46224, USA; ^c Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing, Clarkson University, Potsdam New York 13699, USA

Received:2010-07-06 Revised:2010-12-01 Online:2011-03-15 Published:2011-03-15
Supported by:
Project supported by the Center for Advanced Materials Processing (CAMP) at Clarkson University, the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-3), the National Basic Research Program of China (Grant Nos. 2007CB935400, 2010CB934300 and 2006CB302700), the National High Technology Development Program of China (Grant No. 2008AA031402), the Science and Technology Council of Shanghai, China (Grant Nos. 08DZ2200700, 08JC1421700 and 09QH1402600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

摘要/Abstract

摘要： We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

关键词: chemical mechanical polishing, ceria, oxide over nitride selectivity, origin

Abstract: We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

Key words: chemical mechanical polishing, ceria, oxide over nitride selectivity, origin

中图分类号: (Polishing, grinding, surface finishing)

81.65.Ps

王良咏, 刘波, 宋志棠, 刘卫丽, 封松林, 黄丕成, S.V Babu. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid[J]. 中国物理B, 2011, 20(3): 38102-038102.

Wang Liang-Yong(王良咏), Liu Bo(刘波), Song Zhi-Tang(宋志棠), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), David Huang(黄丕成), and S.V Babu. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid[J]. Chin. Phys. B, 2011, 20(3): 38102-038102.

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Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

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