中国物理B ›› 2011, Vol. 20 ›› Issue (3): 38101-038101.doi: 10.1088/1674-1056/20/3/038101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

王涛, 蒋亚东, 于贺, 吴志明, 赵赫男   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 修回日期:2010-10-20 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60806021).

Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

Wang Tao(王涛)†, Jiang Ya-Dong(蒋亚东), Yu He(于贺), Wu Zhi-Ming(吴志明), and Zhao He-Nan(赵赫男)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Revised:2010-10-20 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60806021).

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摘要： This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The pre-sputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

Abstract: This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The pre-sputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

Key words: Berg's model, time dependence, target voltage, vanadium oxide

中图分类号:  (Deposition by sputtering)

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