中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37304-037304.doi: 10.1088/1674-1056/20/3/037304

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Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

郭尔佳1, 温娟1, 邢杰2   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083, China
  • 收稿日期:2010-08-23 修回日期:2010-11-21 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2010ZY50), and the Science and Technology Foundation for Young Teachers of China University of Geosciences (Beijing, China) (Grant No. 51900961132).

Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

Xing Jie(邢杰)a)†, Guo Er-Jia(郭尔佳)b), and Wen Juan(温娟)b)   

  1. a School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2010-08-23 Revised:2010-11-21 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2010ZY50), and the Science and Technology Foundation for Young Teachers of China University of Geosciences (Beijing, China) (Grant No. 51900961132).

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摘要： Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current--voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p--n heterojunction.

关键词: photoelectric, heterojunction, film

Abstract: Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current–voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p–n heterojunction.

Key words: photoelectric, heterojunction, film

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
73.50.Pz (Photoconduction and photovoltaic effects)