中国物理B ›› 2011, Vol. 20 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/20/12/128501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands

任敏, 李泽宏, 刘小龙, 谢加雄, 邓光敏, 张波   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-06-23 修回日期:2011-07-10 出版日期:2011-12-15 发布日期:2011-12-15
  • 基金资助:
    Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005) and the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010J038).

A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands

Ren Min(任敏)†, Li Ze-Hong(李泽宏), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), Deng Guang-Min(邓光敏), and Zhang Bo(张波)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2011-06-23 Revised:2011-07-10 Online:2011-12-15 Published:2011-12-15
  • Supported by:
    Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005) and the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010J038).

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摘要： A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mOmega cdotmm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “Ron,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

Abstract: A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mOmega cdotmm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “Ron,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

Key words: inhomogeneous floating islands, specific on-state resistance, breakdown voltage, body diode reverse recovery

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)