中国物理B ›› 2010, Vol. 19 ›› Issue (5): 57701-057701.doi: 10.1088/1674-1056/19/5/057701

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Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure

叶超, 宁兆元   

  1. School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
  • 收稿日期:2009-02-04 修回日期:2009-08-30 出版日期:2010-05-15 发布日期:2010-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.~10575074).

Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure

Ye Chao(叶超)† and Ning Zhao-Yuan(宁兆元)   

  1. School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
  • Received:2009-02-04 Revised:2009-08-30 Online:2010-05-15 Published:2010-05-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.~10575074).

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摘要： This paper investigates the capacitance--voltage ($C$--$V$) characteristics of F doping SiCOH low dielectric constant films metal--insulator--semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF$_{3})$ electron cyclotron resonance plasmas. With the CHF$_{3}$/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of $C$--$V$ curves and the increase of flat-band voltage $V_{\rm FB}$ from $-6.1$~V to 32.2~V are obtained. The excursion of $C$--$V$ curves and the shift of $V_{\rm FB}$ are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF$_{3}$/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small $V_{\rm FB}$ of 2.0~V.

Abstract: This paper investigates the capacitance--voltage ($C$--$V$) characteristics of F doping SiCOH low dielectric constant films metal--insulator--semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF$_{3})$ electron cyclotron resonance plasmas. With the CHF$_{3}$/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of $C$--$V$ curves and the increase of flat-band voltage $V_{\rm FB}$ from $-6.1$ V to 32.2 V are obtained. The excursion of $C$--$V$ curves and the shift of $V_{\rm FB}$ are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF$_{3}$/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small $V_{\rm FB}$ of 2.0 V.

Key words: F-SiCOH, low-k dielectrics, capacitance--voltage characteristic

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
77.22.Ch (Permittivity (dielectric function)) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)