中国物理B ›› 2010, Vol. 19 ›› Issue (5): 56103-056103.doi: 10.1088/1674-1056/19/5/056103

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Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

兰慕杰1, 李兴冀2, 耿洪滨2, 杨德庄2, 何世禹2, 刘超铭2   

  1. (1)School of Astronautics, Harbin Institute of Technology, Harbin 150001, China; (2)Space Materials {& Environment Engineering Laboratory, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2009-07-20 修回日期:2009-10-09 出版日期:2010-05-15 发布日期:2010-05-15
  • 基金资助:
    Project supported by the National Basis Research Program of China (Grant No.~61343).

Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

Li Xing-Ji(李兴冀)a)†, Geng Hong-Bin(耿洪滨)a), Lan Mu-Jie(兰慕杰) b), Yang De-Zhuang(杨德庄)a), He Shi-Yu(何世禹)a), and Liu Chao-Ming(刘超铭) a)   

  1. a Space Materials & Environment Engineering Laboratory, Harbin Institute of Technology, Harbin 150001, China; b School of Astronautics, Harbin Institute of Technology, Harbin 150001, China
  • Received:2009-07-20 Revised:2009-10-09 Online:2010-05-15 Published:2010-05-15
  • Supported by:
    Project supported by the National Basis Research Program of China (Grant No.~61343).

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摘要： The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it in-situ} and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.

Abstract: The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.

Key words: radiation effects, MOS and bipolar devices, ionisation damage, displacement damage

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.Pq (Bipolar transistors)