中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37304-037304.doi: 10.1088/1674-1056/19/3/037304

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Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

孟洋, 张培健, 刘紫玉, 廖昭亮, 潘新宇, 梁学锦, 赵宏武, 陈东敏   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2009-07-09 修回日期:2009-08-17 出版日期:2010-03-15 发布日期:2010-03-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No.~2007CB925002), the National High Technology Research and Development Program of China (Grant No.~2008AA031401), and Chinese Academy of Sciences.

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武)†, and Chen Dong-Min(陈东敏)   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2009-07-09 Revised:2009-08-17 Online:2010-03-15 Published:2010-03-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No.~2007CB925002), the National High Technology Research and Development Program of China (Grant No.~2008AA031401), and Chinese Academy of Sciences.

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摘要： We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400--800~nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Abstract: We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400--800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Key words: colossal electroresistance effect, electrical pulse induced resistance switching (EPIR), transparent resistance random access memory (TRRAM)

中图分类号:  (Pulse and digital circuits)

  • 84.30.Sk
81.15.Cd (Deposition by sputtering) 68.60.Bs (Mechanical and acoustical properties) 85.30.De (Semiconductor-device characterization, design, and modeling)