A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

doi:10.1088/1009-1963/15/10/039

中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2422-2426.doi: 10.1088/1009-1963/15/10/039

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

杨富华¹, 马　龙², 王良臣², 黄应龙³, 张　杨⁴

(1)Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of; (2)Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (3)National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (4)Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2006-03-15 修回日期:2006-04-07 出版日期:2006-10-20 发布日期:2006-10-20
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No 2003AA302750).

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

Ma Long(马龙)^a)†, Huang Ying-Long(黄应龙)^b), Zhang Yang(张杨)^c), Yang Fu-Hua(杨富华)^a)b), and Wang Liang-Chen(王良臣)^a)

^a Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^c Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2006-03-15 Revised:2006-04-07 Online:2006-10-20 Published:2006-10-20
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No 2003AA302750).

摘要/Abstract

摘要： This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al_0.24Ga_0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

关键词: resonant tunnelling diode (RTD), high electron mobility transistor (HEMT), molecular beam epitaxy (MBE), bistability, self-latching

Abstract: This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al_0.24Ga_0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

Key words: resonant tunnelling diode (RTD), high electron mobility transistor (HEMT), molecular beam epitaxy (MBE), bistability, self-latching

中图分类号: (Field effect devices)

85.30.Tv

84.30.Sk (Pulse and digital circuits) 85.30.Kk (Junction diodes) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.40.Sz (Deposition technology)

马　龙, 黄应龙, 张　杨, 杨富华, 王良臣. A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor[J]. 中国物理B, 2006, 15(10): 2422-2426.

Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣). A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor[J]. Chinese Physics, 2006, 15(10): 2422-2426.

[1]	Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications[J]. 中国物理B, 2022, 31(5): 58505-058505.
[2]	Yingcong Zhang(张颖聪), Wenjuan Cai(蔡文娟), Xianping Wang(王贤平), Wen Yuan(袁文), Cheng Yin(殷澄), Jun Li(李俊), Haimei Luo(罗海梅), and Minghuang Sang(桑明煌). Low-threshold bistable reflection assisted by oscillating wave interaction with Kerr nonlinear medium[J]. 中国物理B, 2021, 30(8): 84203-084203.
[3]	宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃. High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. 中国物理B, 2020, 29(5): 57307-057307.
[4]	赵明龙, 唐先胜, 霍雯雪, 韩丽丽, 邓震, 江洋, 王文新, 陈弘, 杜春花, 贾海强. Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate[J]. 中国物理B, 2020, 29(4): 48104-048104.
[5]	袁治轩, 冯沛华, 独盟盟, 吴莹. Dynamical response of a neuron-astrocyte coupling system under electromagnetic induction and external stimulation[J]. 中国物理B, 2020, 29(3): 30504-030504.
[6]	Kamran Ullah. Electro-optomechanical switch via tunable bistability and four-wave mixing[J]. 中国物理B, 2019, 28(11): 114209-114209.
[7]	闫甲楷, 朱小霏, 陈彬. Controllable optical bistability in a three-mode optomechanical system with a membrane resonator[J]. 中国物理B, 2018, 27(7): 74214-074214.
[8]	夏秀文, 张新琴, 许静平, 羊亚平. High contrast all-optical diode based on direction-dependent optical bistability within asymmetric ring cavity[J]. 中国物理B, 2016, 25(8): 84211-084211.
[9]	Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin. Optical bistability and multistability via double dark resonance in graphene nanostructure[J]. 中国物理B, 2016, 25(6): 64201-064201.
[10]	Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin. Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2016, 25(5): 54208-054208.
[11]	Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin. Influence of Fano interference and incoherent processes on optical bistability in a four-level quantum dot nanostructure[J]. 中国物理B, 2016, 25(3): 34205-034205.
[12]	Aleksey A Kudreyko, Nail G Migranov, Dana N Migranova. Electro-optic response in thin smectic C^* film with chevron structures[J]. 中国物理B, 2016, 25(12): 126101-126101.
[13]	R. Karimi, S. H. Asadpour, S. Batebi, H. Rahimpour Soleimani. Comparison of absorption–dispersion and optical bistability behaviors between open and closed four-level tripod atomic systems[J]. 中国物理B, 2015, 24(9): 94207-094207.
[14]	Hamedi H R, Mehmannavaz M R, Afshari Hadi. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells[J]. 中国物理B, 2015, 24(8): 84211-084211.
[15]	陈建军, 夏光琼, 吴正茂. Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection[J]. , 2015, 24(2): 24210-024210.

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0