中国物理B ›› 2006, Vol. 15 ›› Issue (8): 1849-1854.doi: 10.1088/1009-1963/15/8/037

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

Study on the delamination of tungsten thin films on Sb2Te3

徐嘉庆1, 刘　波1, 宋志棠1, 封松林1, Bomy Chen2   

  1. (1)Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China; (2)Silicon Storage Technology, Inc., 1171 Sonora Court,Sunnyvale, CA 94086, USA
  • 收稿日期:2005-08-25 修回日期:2006-04-29 出版日期:2006-08-20 发布日期:2006-08-20
  • 基金资助:
    Project Supported by the National High Technology Development Program of China (Grant No 2004AA302G20), Science and Technology Council of Shanghai (Grant Nos 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043, Chinese Academy of Sciences (Grant No Y2005027), and Silicon Storage Technology, Inc.

Study on the delamination of tungsten thin films on Sb2Te3

Xu Jia-Qing(徐嘉庆)a)†, Liu Bo(刘波)a), Song Zhi-Tang(宋志棠)a), Feng Song-Lin(封松林)a), and Chen Bomyb)   

  1. a Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China; b Silicon Storage Technology, Inc., 1171 Sonora Court,Sunnyvale, CA 94086, USA
  • Received:2005-08-25 Revised:2006-04-29 Online:2006-08-20 Published:2006-08-20
  • Supported by:
    Project Supported by the National High Technology Development Program of China (Grant No 2004AA302G20), Science and Technology Council of Shanghai (Grant Nos 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043, Chinese Academy of Sciences (Grant No Y2005027), and Silicon Storage Technology, Inc.

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摘要： To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb$_{2}$Te$_{3}$ bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.

Abstract: To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb$_{2}$Te$_{3}$ bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.

Key words: C-RAM, delamination, adhesion

中图分类号:  (Mechanical and acoustical properties)

  • 68.60.Bs
68.35.Ct (Interface structure and roughness) 68.35.Np (Adhesion) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 84.30.Sk (Pulse and digital circuits)