中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/19/3/037301
王海艳1, 廖文虎1, 周光辉1, 段子刚2
Wang Hai-Yan(王海艳)a), Duan Zi-Gang(段子刚)b), Liao Wen-Hu(廖文虎)a), and Zhou Guang-Hui(周光辉) a)†
摘要: The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W=81.3 and 243.9~nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
中图分类号: (Spin polarized transport in semiconductors)