中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3966-3969.doi: 10.1088/1674-1056/18/9/057

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Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

何怡刚1, 陆爱霞2, 万青2, 周郁明3   

  1. (1)College of Electrical and Information Engineering, Hunan University, Changsha 410082, China; (2)College of Physics and Microelectronic, Hunan University, Changsha 410082, China; (3)College of Physics and Microelectronic, Hunan University, Changsha 410082, China;College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
  • 收稿日期:2009-02-15 修回日期:2009-04-07 出版日期:2009-09-20 发布日期:2009-09-20
  • 基金资助:
    Project was supported by the National Natural Science Foundation of China (Grant Nos 50677014, 50602014 and 10874042), the National High Technology Joint Research Program of China (Grant No 2006AA04A104), the Science-Technology Foundation of Hunan Province of China (Grant Nos 2008RS4003 and 07jj107).

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

Zhou Yu-Ming(周郁明)a)b)†, He Yi-Gang(何怡刚)b), Lu Ai-Xia(陆爱霞)a), and Wan Qing(万青)a)   

  1. a College of Physics and Microelectronic, Hunan University, Changsha 410082, China; b College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
  • Received:2009-02-15 Revised:2009-04-07 Online:2009-09-20 Published:2009-09-20
  • Supported by:
    Project was supported by the National Natural Science Foundation of China (Grant Nos 50677014, 50602014 and 10874042), the National High Technology Joint Research Program of China (Grant No 2006AA04A104), the Science-Technology Foundation of Hunan Province of China (Grant Nos 2008RS4003 and 07jj107).

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摘要： The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.

Abstract: The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.

Key words: simulation, ZnO thin film transistor, grain boundary

中图分类号:  (Field effect devices)

  • 85.30.Tv
61.72.Mm (Grain and twin boundaries) 73.61.Ga (II-VI semiconductors)