Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary
周郁明, 何怡刚, 陆爱霞, 万青
Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary
Zhou Yu-Ming(周郁明), He Yi-Gang(何怡刚), Lu Ai-Xia(陆爱霞), and Wan Qing(万青)
中国物理B . 2009, (9): 3966 -3969 .  DOI: 10.1088/1674-1056/18/9/057