中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3002-3007.doi: 10.1088/1674-1056/18/7/064

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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide

欧谷平1, 张福甲1, 李建丰2, 常文利3   

  1. (1)Department of Physics, Lanzhou University, Lanzhou 730000, China; (2)Department of Physics, Lanzhou University, Lanzhou 730000, China;School of Mathematics, Physics & Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China; (3)School of Mathematics, Physics & Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
  • 收稿日期:2008-10-02 修回日期:2008-12-24 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60676033 and 60276026), the Natural Science Foundation of Gansu Province, China (Grant No ZS031-A25-012-G), and `Qing Lan' Talent Engineering Funds from Lanzhou Jiaotong University, China (Grant No QL-08-18A).

Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide

Li Jian-Feng(李建丰)a)b), Chang Wen-Li(常文利)b), Ou Gu-Ping(欧谷平)a), and Zhang Fu-Jia(张福甲)a)†   

  1. a Department of Physics, Lanzhou University, Lanzhou 730000, China; b School of Mathematics, Physics & Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
  • Received:2008-10-02 Revised:2008-12-24 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60676033 and 60276026), the Natural Science Foundation of Gansu Province, China (Grant No ZS031-A25-012-G), and `Qing Lan' Talent Engineering Funds from Lanzhou Jiaotong University, China (Grant No QL-08-18A).

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摘要： Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18~cm2/(V.s) and field-effect electron mobility of 0.031~cm2/(V.s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.

Abstract: Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm2/(V$\cdot$s) and field-effect electron mobility of 0.031 cm2/(V$\cdot$s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.

Key words: organic heterojunction transistors, ambipolar, air-stable, high electron affinity

中图分类号:  (Field effect devices)

  • 85.30.Tv
84.30.Sk (Pulse and digital circuits) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 72.20.Ee (Mobility edges; hopping transport)