中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3459-3463.doi: 10.1088/1674-1056/17/9/053

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Raman analysis of defects in n-type 4H-SiC

王平1, 杨银堂2, 韩茹2   

  1. (1)Qimonda Technologies Xi'an, Xi'an 710075, China; (2)School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 收稿日期:2007-12-01 修回日期:2008-04-17 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the National Defense Pre-Research Foundation of China (Grant Nos 51308030201 and 51323040118).

Raman analysis of defects in n-type 4H-SiC

Yang Yin-Tang(杨银堂)a)†, Han Ru(韩茹)a), and Wang-Ping(王平)b)   

  1. a  School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; b Qimonda Technologies Xi'an, Xi'an 710075, China
  • Received:2007-12-01 Revised:2008-04-17 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the National Defense Pre-Research Foundation of China (Grant Nos 51308030201 and 51323040118).

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摘要： This paper employs micro-Raman technique for detailed analysis of the defects (both inside and outside) in bulk 4H-SiC. The main peaks of the first-order Raman spectrum obtained in the centre of defect agree well with those of perfect bulk 4H-SiC, which indicate that there is no parasitic polytype in the round pit and the hexagonal defect. Four electronic Raman scattering peaks from nitrogen defect levels are observed in the round pit (395\,cm$^{-1}$, 526\,cm$^{-1}$, 572\,cm$^{-1}$, and 635\,cm$^{-1})$, but cannot be found in the spectra of hexagonal defect. The theoretical analysis of the longitudinal optical plasmon--phonon coupled mode line shape indicates the nonuniformity of nitrogen distribution between the hexagonal defect and the outer area in 4H-SiC. The second-order Raman features of the defects in bulk 4H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure and compared with that in the free defect zone.

关键词: silicon carbide, electronic Raman scattering, round pit, hexagonal defect

Abstract: This paper employs micro-Raman technique for detailed analysis of the defects (both inside and outside) in bulk 4H-SiC. The main peaks of the first-order Raman spectrum obtained in the centre of defect agree well with those of perfect bulk 4H-SiC, which indicate that there is no parasitic polytype in the round pit and the hexagonal defect. Four electronic Raman scattering peaks from nitrogen defect levels are observed in the round pit (395 cm$^{-1}$, 526 cm$^{-1}$, 572 cm$^{-1}$, and 635 cm$^{-1})$, but cannot be found in the spectra of hexagonal defect. The theoretical analysis of the longitudinal optical plasmon--phonon coupled mode line shape indicates the nonuniformity of nitrogen distribution between the hexagonal defect and the outer area in 4H-SiC. The second-order Raman features of the defects in bulk 4H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure and compared with that in the free defect zone.

Key words: silicon carbide, electronic Raman scattering, round pit, hexagonal defect

中图分类号:  (Other nonmetallic inorganics)

  • 78.30.Hv
61.72.S- (Impurities in crystals) 63.20.kp (Phonon-defect interactions)