中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1101-1104.doi: 10.1088/1009-1963/16/4/040

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Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

周美丽, 付亚波, 陈强, 葛袁静   

  1. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • 收稿日期:2006-05-26 修回日期:2006-10-30 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the Beijing Education Funds (Grant No KW20050001), the Talent Funds of Beijing Institute of Graphic Communication and Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction o

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

Zhou Mei-Li(周美丽), Fu Ya-Bo(付亚波), Chen Qiang(陈强)†, and Ge Yuan-Jing(葛袁静）   

  1. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • Received:2006-05-26 Revised:2006-10-30 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the Beijing Education Funds (Grant No KW20050001), the Talent Funds of Beijing Institute of Graphic Communication and Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction o

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摘要： This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasma-enhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/ Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200~W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

关键词: RF-PECVD, TMDSO, SiOx films, barrier property

Abstract: This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasma-enhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/ Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

Key words: RF-PECVD, TMDSO, SiOx films, barrier property

中图分类号:  (Plasma-based ion implantation and deposition)

  • 52.77.Dq
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.37.Ps (Atomic force microscopy (AFM)) 78.30.Hv (Other nonmetallic inorganics)