中国物理B ›› 2013, Vol. 22 ›› Issue (5): 55204-055204.doi: 10.1088/1674-1056/22/5/055204

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

T. Hussaina, R. Ahmada, N. Khalidb, Z. A. Umarb, A. Hussnainb   

  1. a Center For Advanced Studies in Physics (CASP), 1-Church Road, GC University, Lahore, Pakistan;
    b Department of Physics, Government College University, 54000 Lahore, Pakistan
  • 收稿日期:2012-07-12 修回日期:2012-10-09 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Project supported by the HEC, Pakistan.

Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

T. Hussaina, R. Ahmada, N. Khalidb, Z. A. Umarb, A. Hussnainb   

  1. a Center For Advanced Studies in Physics (CASP), 1-Church Road, GC University, Lahore, Pakistan;
    b Department of Physics, Government College University, 54000 Lahore, Pakistan
  • Received:2012-07-12 Revised:2012-10-09 Online:2013-04-01 Published:2013-04-01
  • Contact: T. Hussain E-mail:tousifhussain@gmail.com
  • Supported by:
    Project supported by the HEC, Pakistan.

PDF (PC)

800

赞

摘要： A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).

关键词: plasma focus, TiN/a-Si3N4 films, X-ray diffraction

Abstract: A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).

Key words: plasma focus, TiN/a-Si3N4 films, X-ray diffraction

中图分类号:  (Dense plasma focus)

  • 52.59.Hq
52.77.Dq (Plasma-based ion implantation and deposition) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)) 68.37.Ps (Atomic force microscopy (AFM))