Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

doi:10.1088/1674-1056/26/10/108201

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108201-108201.doi: 10.1088/1674-1056/26/10/108201

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

Zhiqian Zhao(赵治乾), Jing Zhang(张静), Xiaolei Wang(王晓磊), Shuhua Wei(魏淑华), Chao Zhao(赵超), Wenwu Wang(王文武)

1. Microelectronics Department, North China University of Technology, Beijing 100041, China;
2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2017-04-01 修回日期:2017-06-15 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Jing Zhang, Jing Zhang E-mail:zhangj@ncut.edu.cn;wangxiaolei@ime.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

Zhiqian Zhao(赵治乾)¹, Jing Zhang(张静)¹, Xiaolei Wang(王晓磊)^2,3, Shuhua Wei(魏淑华)¹, Chao Zhao(赵超)^2,3, Wenwu Wang(王文武)^2,3

1. Microelectronics Department, North China University of Technology, Beijing 100041, China;
2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2017-04-01 Revised:2017-06-15 Online:2017-10-05 Published:2017-10-05
Contact: Jing Zhang, Jing Zhang E-mail:zhangj@ncut.edu.cn;wangxiaolei@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

摘要/Abstract

摘要： The growth process of GeO_x films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge⁴⁺ states, a mixture of the Ge²⁺ and Ge³⁺ states, and the Ge¹⁺ states are localized from the GeO_x surface to the GeO_x/Ge interface. Moreover, the Ge¹⁺ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeO_x layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices.

关键词: Ge, plasma post-oxidation, MOS, XPS

Abstract: The growth process of GeO_x films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge⁴⁺ states, a mixture of the Ge²⁺ and Ge³⁺ states, and the Ge¹⁺ states are localized from the GeO_x surface to the GeO_x/Ge interface. Moreover, the Ge¹⁺ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeO_x layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices.

Key words: Ge, plasma post-oxidation, MOS, XPS

中图分类号: (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

82.80.Pv

81.65.Mq (Oxidation) 52.77.Dq (Plasma-based ion implantation and deposition)

赵治乾, 张静, 王晓磊, 魏淑华, 赵超, 王文武. Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation[J]. 中国物理B, 2017, 26(10): 108201-108201.

Zhiqian Zhao(赵治乾), Jing Zhang(张静), Xiaolei Wang(王晓磊), Shuhua Wei(魏淑华), Chao Zhao(赵超), Wenwu Wang(王文武). Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation[J]. Chin. Phys. B, 2017, 26(10): 108201-108201.

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Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

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