中国物理B ›› 2002, Vol. 11 ›› Issue (5): 419-424.doi: 10.1088/1009-1963/11/5/302

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Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

董丽芳1, 陈俊英1, 董国义1, 尚勇2   

  1. (1)College of Physics Science and Technology, Hebei University, Baoding 071002, China; (2)Natural Science Foundation of Hebei Province, Shijiazhuang 050021, China
  • 收稿日期:2001-09-23 修回日期:2002-01-14 出版日期:2002-05-13 发布日期:2005-06-13
  • 基金资助:
    Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).

Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

Dong Li-Fang (董丽芳)a, Chen Jun-Ying (陈俊英)a, Dong Guo-Yi (董国义)a, Shang Yong (尚勇)b   

  1. a College of Physics Science and Technology, Hebei University, Baoding 071002, China; b Natural Science Foundation of Hebei Province, Shijiazhuang 050021, China
  • Received:2001-09-23 Revised:2002-01-14 Online:2002-05-13 Published:2005-06-13
  • Supported by:
    Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).

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摘要： The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

Abstract: The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td = 10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

Key words: Monte Carlo method, chemical vapour deposition, electron swarm, drift velocity

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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