中国物理B ›› 1994, Vol. 3 ›› Issue (2): 116-123.doi: 10.1088/1004-423X/3/2/005

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RADIATION-INDUCED DAMAGE IN GaP BY MeV HELIUM IONS

李向阳, 承焕生, 杨福家   

  1. T.D.Lee Physics Laboratory, Department of Physics II, Fudan University, Shanghai 200433, China
  • 收稿日期:1993-05-31 出版日期:1994-02-20 发布日期:1994-02-20

RADIATION-INDUCED DAMAGE IN GaP BY MeV HELIUM IONS

LI XIANG-YANG (李向阳), CHENG HUAN-SHENG (承焕生), YANG FU-JIA (杨福家)   

  1. T.D.Lee Physics Laboratory, Department of Physics II, Fudan University, Shanghai 200433, China
  • Received:1993-05-31 Online:1994-02-20 Published:1994-02-20

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摘要： The creation of defects in GaP bombarded with MeV 4He ions has been studied under ultra-high-vacuum condition by Rutherford backscattering/channeling (RBS/C) method, and the absolute damage cross section σd for GaP has been determined under bombardment of 1.0 MeV 4He ions, with the measured value 8.0xl0-18 cm2. Our experimental results suggest that the defect generation rate is strongly related to the surface condition. When the GaP covered with a thin amorphous layer, a significant ion beam annealing effect will be observed. The present results show that for GaP the damage is produced mainly by nuclear collision.

Abstract: The creation of defects in GaP bombarded with MeV 4He ions has been studied under ultra-high-vacuum condition by Rutherford backscattering/channeling (RBS/C) method, and the absolute damage cross section $\sigma$d for GaP has been determined under bombardment of 1.0 MeV 4He ions, with the measured value 8.0xl0-18 cm2. Our experimental results suggest that the defect generation rate is strongly related to the surface condition. When the GaP covered with a thin amorphous layer, a significant ion beam annealing effect will be observed. The present results show that for GaP the damage is produced mainly by nuclear collision.

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.72.uj (III-V and II-VI semiconductors) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis) 73.20.At (Surface states, band structure, electron density of states)