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Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
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Jia-Li You(游佳丽), Yu-Song Wang(王雨松), Tong Wang(王彤), Li-Li Fu(付丽丽), Qing-Yang Yue(岳庆炀), Xiang-Fu Wang(王祥夫), Rui-Lin Zheng(郑锐林), and Chun-Xiao Liu(刘春晓). Optical properties of He+-implanted and diamond blade-diced terbium gallium garnet crystal planar and ridge waveguides[J]. 中国物理B, 2022, 31(11): 114203-114203. |
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Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(8): 86106-086106. |
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Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), Zheng-Hao Shen(沈正皓), Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Jin Li(李进), Min Liao(廖敏), and Yi-Chun Zhou(周益春). Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique[J]. 中国物理B, 2022, 31(7): 76103-076103. |
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Awen Liu(刘阿文), Hefei Huang(黄鹤飞), Jizhao Liu(刘继召), Zhenbo Zhu(朱振博), and Yan Li(李燕). Helium bubble formation and evolution in NiMo-Y2O3 alloy under He ion irradiation[J]. 中国物理B, 2022, 31(4): 46102-046102. |
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Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生). Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions[J]. 中国物理B, 2022, 31(4): 46103-046103. |
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Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平). Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET[J]. 中国物理B, 2022, 31(1): 18501-018501. |
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Danqing Zhou(周丹晴), Dongyu Li(李东彧), Yuhan Chen(陈钰焓), Minjian Wu(吴旻剑), Tong Yang(杨童), Hao Cheng(程浩), Yuze Li(李昱泽), Yi Chen(陈艺), Yue Li(李越), Yixing Geng(耿易星), Yanying Zhao(赵研英), Chen Lin(林晨), Xueqing Yan(颜学庆), and Ziqiang Zhao(赵子强). Preparation of graphene on SiC by laser-accelerated pulsed ion beams[J]. 中国物理B, 2021, 30(11): 116106-116106. |
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Rui Zhu(朱睿), Qin Zhou(周钦), Li Shi(史力), Li-Bin Sun(孙立斌), Xin-Xin Wu(吴莘馨), Sha-Sha Lv(吕沙沙), and Zheng-Cao Li(李正操). Evolution of helium bubbles in nickel-based alloy by post-implantation annealing[J]. 中国物理B, 2021, 30(8): 86102-086102. |
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Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), N Daghbouj, Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Peng Gao(高鹏), Nie-Feng Sun(孙聂枫), and Min Liao(廖敏). Mechanism of defect evolution in H+ and He+ implanted InP[J]. 中国物理B, 2021, 30(8): 86104-086104. |
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Haocheng Liu(刘昊成), Jia Huang(黄嘉), Liuxuan Cao(曹留煊), Yue Su(苏悦), Zhiying Gao(高智颖), Pengfei Ma(马鹏飞), Songqin Xia(夏松钦), Wei Ge(葛伟), Qingyuan Liu(刘清元), Shuang Zhao(赵双), Yugang Wang(王宇钢), Jinchi Huang(黄金池), Zhehui Zhou(周哲辉), Pengfei Zheng(郑鹏飞), and Chenxu Wang(王晨旭). Helium-hydrogen synergistic effects on swelling in in-situ multiple-ion beams irradiated steels[J]. 中国物理B, 2021, 30(8): 86106-086106. |
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Zheng Han(韩铮), Xu Wang(王旭), Jiao Wang(王娇), Qing Liao(廖庆), and Bingsheng Li(李炳生). Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing[J]. 中国物理B, 2021, 30(8): 86107-086107. |
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Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing[J]. 中国物理B, 2021, 30(8): 86109-086109. |
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Zhen Yang(杨振), Junyuan Yang(杨浚源), Qing Liao(廖庆), Shuai Xu(徐帅), and Bingsheng Li(李炳生). Effect of helium concentration on irradiation damage of Fe-ion irradiated SIMP steel at 300 ℃ and 450 ℃[J]. 中国物理B, 2021, 30(5): 56107-056107. |
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Yong Wang(王勇), Qing Liao(廖庆), Ming Liu(刘茗), Peng-Fei Zheng(郑鹏飞), Xinyu Gao(高新宇), Zheng Jia(贾政), Shuai Xu(徐帅), and Bing-Sheng Li(李炳生). Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation[J]. 中国物理B, 2021, 30(5): 56106-056106. |