中国物理B ›› 2023, Vol. 32 ›› Issue (7): 76102-076102.doi: 10.1088/1674-1056/accb8a
Aoxue Zhong(钟傲雪)1, Lei Wang(王磊)2,†, Yun Tang(唐蕴)2, Yongtao Yang(杨永涛)1, Jinjin Wang(王进进)3, Huiping Zhu(朱慧平)2, Zhenping Wu(吴真平)1, Weihua Tang(唐为华)1,‡, and Bo Li(李博)2
Aoxue Zhong(钟傲雪)1, Lei Wang(王磊)2,†, Yun Tang(唐蕴)2, Yongtao Yang(杨永涛)1, Jinjin Wang(王进进)3, Huiping Zhu(朱慧平)2, Zhenping Wu(吴真平)1, Weihua Tang(唐为华)1,‡, and Bo Li(李博)2
摘要: The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study. The electrical properties of both P-GaN and N-GaN, separated from power devices, were gauged for fundamental analysis. It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation, as indicated by the Hall and circular transmission line model. Specifically, under a 100-Mrad(Si) x-ray dose, the specific contact resistance ρc of P-GaN decreased by 30%, and the hole carrier concentration increased significantly. Additionally, the atom displacement damage effect of a 2-MeV proton of 1×1013 p/cm2 led to a significant degradation of the electrical properties of P-GaN, while those of N-GaN remained unchanged. P-GaN was found to be more sensitive to irradiation than N-GaN thin film. The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.
中图分类号: (Physical radiation effects, radiation damage)