中国物理B ›› 2023, Vol. 32 ›› Issue (4): 48505-048505.doi: 10.1088/1674-1056/acbd29

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Optimal impurity distribution model and experimental verification of variation of lateral doping termination

Min Ren(任敏)1,2,†, Chang-Yu Ye(叶昶宇)1, Jian-Yu Zhou(周建宇)1, Xin Zhang(张新)3, Fang Zheng(郑芳)3, Rong-Yao Ma(马荣耀)3, Ze-Hong Li(李泽宏)1,2, and Bo Zhang(张波)1,2   

  1. 1 State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China;
    3 Wuxi China Resources Huajing Microelectronics Co. LTD, Wuxi 214061, China
  • 收稿日期:2023-01-16 修回日期:2023-02-12 接受日期:2023-02-20 出版日期:2023-03-10 发布日期:2023-03-30
  • 通讯作者: Min Ren E-mail:renmin@uestc.edu.cn
  • 基金资助:
    Project supported by the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2020010) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2023A1515012652).

Optimal impurity distribution model and experimental verification of variation of lateral doping termination

Min Ren(任敏)1,2,†, Chang-Yu Ye(叶昶宇)1, Jian-Yu Zhou(周建宇)1, Xin Zhang(张新)3, Fang Zheng(郑芳)3, Rong-Yao Ma(马荣耀)3, Ze-Hong Li(李泽宏)1,2, and Bo Zhang(张波)1,2   

  1. 1 State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China;
    3 Wuxi China Resources Huajing Microelectronics Co. LTD, Wuxi 214061, China
  • Received:2023-01-16 Revised:2023-02-12 Accepted:2023-02-20 Online:2023-03-10 Published:2023-03-30
  • Contact: Min Ren E-mail:renmin@uestc.edu.cn
  • Supported by:
    Project supported by the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2020010) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2023A1515012652).

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摘要： Based on the charge balance principle, an optimal impurity distribution variation of lateral doping termination (OID-VLD) and its ion-injection mask design method are proposed and verified. The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD (T-VLD). Vertical double diffusion MOSFET (VDMOS) with OID-VLD achieved breakdown voltage (BV) of 1684 V and passed the 168 hours 100 ℃-110 ℃-120 ℃-125 ℃ high-temperature reverse bias (HTRB) test, while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120 ℃ HTRB test.

关键词: variation of lateral doping (VLD), junction termination, breakdown voltage, reliability

Abstract: Based on the charge balance principle, an optimal impurity distribution variation of lateral doping termination (OID-VLD) and its ion-injection mask design method are proposed and verified. The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD (T-VLD). Vertical double diffusion MOSFET (VDMOS) with OID-VLD achieved breakdown voltage (BV) of 1684 V and passed the 168 hours 100 ℃-110 ℃-120 ℃-125 ℃ high-temperature reverse bias (HTRB) test, while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120 ℃ HTRB test.

Key words: variation of lateral doping (VLD), junction termination, breakdown voltage, reliability

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices)