High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

doi:10.1088/1674-1056/ac6dbf

中国物理B ›› 2023, Vol. 32 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/ac6dbf

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack

Wen Xiong(熊文)¹, Jing-Yong Huo(霍景永)¹, Xiao-Han Wu(吴小晗)¹, Wen-Jun Liu(刘文军)^1,†, David Wei Zhang(张卫)^1,2, and Shi-Jin Ding(丁士进)^1,2,‡

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 National Integrated Circuit Innovation Center, Shanghai 201203, China

收稿日期:2022-01-11 修回日期:2022-03-31 接受日期:2022-05-07 出版日期:2022-12-08 发布日期:2022-12-08
通讯作者: Wen-Jun Liu, Shi-Jin Ding E-mail:wjliu@fudan.edu.cn;sjding@fudan.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029).

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack

Wen Xiong(熊文)¹, Jing-Yong Huo(霍景永)¹, Xiao-Han Wu(吴小晗)¹, Wen-Jun Liu(刘文军)^1,†, David Wei Zhang(张卫)^1,2, and Shi-Jin Ding(丁士进)^1,2,‡

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 National Integrated Circuit Innovation Center, Shanghai 201203, China

Received:2022-01-11 Revised:2022-03-31 Accepted:2022-05-07 Online:2022-12-08 Published:2022-12-08
Contact: Wen-Jun Liu, Shi-Jin Ding E-mail:wjliu@fudan.edu.cn;sjding@fudan.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029).

摘要/Abstract

摘要： Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.

关键词: nonvolatile memory, a-IGZO thin-film transistor (TFT), charge trapping stack, p-SnO/n-SnO₂ heterojunction

Abstract: Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.

Key words: nonvolatile memory, a-IGZO thin-film transistor (TFT), charge trapping stack, p-SnO/n-SnO₂ heterojunction

中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

85.40.-e

85.35.-p (Nanoelectronic devices) 85.30.Tv (Field effect devices)

Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.

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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack

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