Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

doi:10.1088/1674-1056/ac0795

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/ac0795

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Jing-Fen Zhao(赵敬芬)^†, Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟)

School of Physics and Electronic Engineering, Qilu Normal University, Jinan 250100, China

收稿日期:2021-03-25 修回日期:2021-05-27 接受日期:2021-06-03 出版日期:2021-12-03 发布日期:2021-12-23
通讯作者: Jing-Fen Zhao E-mail:jingfenzhao@163.com
基金资助:
Project supported by the National Natural Science Foundations of China (Grant No. 11574118) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019PEM006).

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Jing-Fen Zhao(赵敬芬)^†, Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟)

School of Physics and Electronic Engineering, Qilu Normal University, Jinan 250100, China

Received:2021-03-25 Revised:2021-05-27 Accepted:2021-06-03 Online:2021-12-03 Published:2021-12-23
Contact: Jing-Fen Zhao E-mail:jingfenzhao@163.com
Supported by:
Project supported by the National Natural Science Foundations of China (Grant No. 11574118) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019PEM006).

摘要/Abstract

摘要： Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics. Using nonequilibrium Green's function combined with density functional theory, a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied. The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping. Remarkably, by tuning the edge hydrogenation, it is found that the spin filter efficiency can be varied from 30% to 58%. Moreover, it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction. These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.

关键词: silicene nanoribbons, spin filtering effect, negative differential resistance

Abstract: Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics. Using nonequilibrium Green's function combined with density functional theory, a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied. The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping. Remarkably, by tuning the edge hydrogenation, it is found that the spin filter efficiency can be varied from 30% to 58%. Moreover, it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction. These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.

Key words: silicene nanoribbons, spin filtering effect, negative differential resistance

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

72.25.-b (Spin polarized transport) 72.80.Vp (Electronic transport in graphene)

Jing-Fen Zhao(赵敬芬), Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟). Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations[J]. 中国物理B, 2022, 31(1): 17302-017302.

参考文献

[2] Fleurence A and Yamada-Takamura Y 2012 Phys. Rev. Lett. 108 245501
[3] Meng L, Wang Y, Zhang L, Zhang Y and Gao H J 2013 Nano Lett. 13 685
[4] Ding Y and Ni J 2009 Appl. Phys. Lett. 95 083115
[5] Cahangirov S and Topsakal M 2009 Phys. Rev. Lett. 102 236804
[6] Liu C C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
[7] Huang S, Kang W and Yang L 2013 Appl. Phys. Lett. 102 133106
[8] Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
[9] Ezawa M 2012 Phys. Rev. Lett. 109 055502
[10] Xu C Y, Luo G F, Zheng J X, Zhang Z M and Lu J 2012 Nanoscale 4 3111
[11] Houssa M, Dimoulas A and Molle A 2015 J. Phys.: Condens. Matter 27 253002
[12] Xiang H, Kan E and Yang J 2009 Nano Lett. 9 4025
[13] Cai J M, Pignedoli C A, Talirz L 2014 Nat. Nanotechnol. 11 896
[14] Zou D Q, Cui B and Liu D S 2015 Phys. Chem. Chem. Phys. 17 11292
[15] Ren Y and Chen K Q 2010 J. Appl. Phys. 107 044514
[16] Sahin H, Cahangirov S, Topsakal M, Akturk E, Senger R T and Ciraci S 2009 Phys. Rev. B 80 155453
[17] Fan Z Q, Xie F, Jiang X W, Wei Z M and Li S S 2016 Carbon 110 200
[18] Fan Z Q, Sun W Y, Jiang X W and Long M Q 2017 Carbon 113 18
[19] Cahangirov S and Topsakal M 2009 Phys. Rev. Lett. 102 236804
[20] Deng X Q, Zhang Z H, Fan Z Q and Yang C H 2014 RSC Adv. 4 58941
[21] Cahangirov S, Topsakal M and Ciraci S 2009 Phys. Rev. Lett. 102 236804
[22] Kara A, Enriquez H, Aufray B and Oughaddou H 2012 Surf. Sci. Rep. 67 1
[23] De Padova P, Perfetti P, Olivieri B, Quaresima C, Ottaviani C and Le Lay G 2012 J. Phys.: Condens. Matter 24 223001
[24] Ni Z, Liu Q, Tang K, Gao Z, Yu D and Lu J 2012 Nano Lett. 12 113
[25] Kang J, Wu F and Li J 2012 Appl. Phys. Lett. 100 233122
[26] Pan L, Liu H J and Zheng G 2012 Phys. Chem. Chem. Phys. 14 13588
[27] Yang X F, Liu Y S and Chi F 2014 J. Appl. Phys. 116 124312
[28] Luan H X, Zhang C W and Wang P J 2013 J. Phys. Chem. C 117 13620
[29] Fang D Q, Zhang S L and Xu H 2013 RSC Adv. 3 24075
[30] Zheng F B, Zhang C W, Yan S S and Li F 2013 J. Mater. Chem. C 1 2735
[31] Ding Y and Wang Y 2013 Appl. Phys. Lett. 102 143115
[32] Zhang D, Long M Q and Zhang X J 2014 Chem. Phys. Lett. 616 178
[33] Zeng J, Chen K Q, He J, Zhang X J and Sun C Q 2011 J. Phys. Chem. C 115 25072
[34] Zhao J F, Fang C F, Cui B and Liu D S 2017 Org. Electron. 41 333
[35] Chen A B, Wang X F and Liu Y S 2014 Phys. Chem. Chem. Phys. 16 5113
[36] Hu G C, Zuo M Y and Xie S J 2014 Appl. Phys. Lett. 104 033302
[37] Brandbyge M, Taylor J and Stokbro K 2002 Phys. Rev. B 65 165401
[38] Soler J M, Artacho E, Junquera J and Ordejon P 2002 J. Phys.: Condens. Matter 14 2745
[39] Taylor J, Guo H and Wang J 2001 Phys. Rev. B 63 121104
[40] Taylor J, Guo H and Wang J 2001 Phys. Rev. B 63 245407
[41] Büttiker M, Imry Y, Landauer R and Pinhas S 1985 Phys. Rev. B 31 6207
[42] Li Z Y, Qian H Y, Wu J, Gu B L and Duan W H 2008 Phys. Rev. Lett. 100 206802
[43] Fan Z Q, Deng X Q, Tang G P and Chen K Q 2013 Appl. Phys. Lett. 102 023508
[44] Xie Fang, Fan Z Q, Liu K, Yu J H and Chen K Q 2015 Org. Electron. 27 41

[1]	Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy[J]. 中国物理B, 2021, 30(12): 127301-127301.
[2]	汤方栋, 杜乾衡, Cedomir Petrovic, 张威, 何明全, 张立源. Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony[J]. 中国物理B, 2019, 28(3): 37104-037104.
[3]	张真真, 符张龙, 郭旭光, 曹俊诚. 4.3 THz quantum-well photodetectors with high detection sensitivity[J]. 中国物理B, 2018, 27(3): 30701-030701.
[4]	赵虹, 彭丹丹, 何军, 李新梅, 龙孟秋. Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons[J]. 中国物理B, 2018, 27(10): 108504-108504.
[5]	冯申艳, 张巧璇, 杨洁, 雷鸣, 屈贺如歌. Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures[J]. 中国物理B, 2017, 26(9): 97401-097401.
[6]	郭艳华, 曹觉先, 徐波. Characteristics of Li diffusion on silicene and zigzag nanoribbon[J]. 中国物理B, 2016, 25(1): 17101-017101.
[7]	汪萨克, 汪军. Spin and valley filter in strain engineered silicene[J]. , 2015, 24(3): 37202-037202.
[8]	武德起, 丁武昌, 杨姗姗, 贾锐, 金智, 刘新宇. High performance oscillator with 2-mW output power at 300 GHz[J]. 中国物理B, 2014, 23(5): 57204-057204.
[9]	陈灵娜, 马松山, 欧阳方平, 伍小赞, 肖金, 徐慧. Negative differential resistance behaviour in N-doped crossed graphene nanoribbons[J]. 中国物理B, 2010, 19(9): 97301-097301.
[10]	张晓昕, 曾一平, 王晓光, 王保强, 朱占平. Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J]. 中国物理B, 2004, 13(9): 1560-1563.

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 10

Metrics

本文评价

推荐阅读 0