›› 2015, Vol. 24 ›› Issue (3): 37202-037202.doi: 10.1088/1674-1056/24/3/037202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Spin and valley filter in strain engineered silicene

汪萨克, 汪军   

  1. Department of Physics, Southeast University, Nanjing 210096, China
  • 收稿日期:2014-09-01 修回日期:2014-11-01 出版日期:2015-03-05 发布日期:2015-03-05

Spin and valley filter in strain engineered silicene

Wang Sa-Ke (汪萨克), Wang Jun (汪军)   

  1. Department of Physics, Southeast University, Nanjing 210096, China
  • Received:2014-09-01 Revised:2014-11-01 Online:2015-03-05 Published:2015-03-05
  • Contact: Wang Jun E-mail:jwang@seu.edu.cn

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摘要： The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin-orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene.

关键词: spin filtering effect, valley filtering effect, transmission, valleytronics

Abstract: The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin-orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene.

Key words: spin filtering effect, valley filtering effect, transmission, valleytronics

中图分类号:  (Spin polarized transport in semiconductors)

  • 72.25.Dc
72.80.Vp (Electronic transport in graphene) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)