Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony

doi:10.1088/1674-1056/28/3/037104

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 37104-037104.doi: 10.1088/1674-1056/28/3/037104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony

Fangdong Tang(汤方栋), Qianheng Du(杜乾衡), Cedomir Petrovic, Wei Zhang(张威), Mingquan He(何明全), Liyuan Zhang(张立源)

1 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
2 Department of Physics, Southern University of Science and Technology, and Shenzhen Institute for Quantum Science and Engineering, Shenzhen 518055, China;
3 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA;
4 Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11790, USA;
5 Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, China

收稿日期:2018-12-22 修回日期:2019-01-23 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Liyuan Zhang E-mail:zhangly@sustc.edu.cn
基金资助:
Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony

Fangdong Tang(汤方栋)^1,2, Qianheng Du(杜乾衡)^3,4, Cedomir Petrovic^3,4, Wei Zhang(张威)¹, Mingquan He(何明全)⁵, Liyuan Zhang(张立源)²

1 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
2 Department of Physics, Southern University of Science and Technology, and Shenzhen Institute for Quantum Science and Engineering, Shenzhen 518055, China;
3 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA;
4 Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11790, USA;
5 Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, China

Received:2018-12-22 Revised:2019-01-23 Online:2019-03-05 Published:2019-03-05
Contact: Liyuan Zhang E-mail:zhangly@sustc.edu.cn
Supported by:
Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).

摘要/Abstract

摘要：

We present a systematical study on single crystalline FeSb₂ using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance (CC-NDR) observed in current-voltage characteristics below~7 K is closely associated with the intrinsic transition~5 K of FeSb₂, which is, however, mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb₂ lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen (dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb₂ crystals.

关键词: two-carrier transport, negative differential resistance, quantum oscillations, FeSb₂ with embedded antimony

Abstract:

Key words: two-carrier transport, negative differential resistance, quantum oscillations, FeSb₂ with embedded antimony

中图分类号: (Strongly correlated electron systems; heavy fermions)

71.27.+a

71.28.+d (Narrow-band systems; intermediate-valence solids) 72.20.My (Galvanomagnetic and other magnetotransport effects)

汤方栋, 杜乾衡, Cedomir Petrovic, 张威, 何明全, 张立源. Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony[J]. 中国物理B, 2019, 28(3): 37104-037104.

Fangdong Tang(汤方栋), Qianheng Du(杜乾衡), Cedomir Petrovic, Wei Zhang(张威), Mingquan He(何明全), Liyuan Zhang(张立源). Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony[J]. Chin. Phys. B, 2019, 28(3): 37104-037104.

参考文献 41

[1]	Bentien A, Johnsen S, Madsen G K H, Iversen B B and Steglich F 2007 Europhys. Lett. 80 17008 doi: 10.1209/0295-5075/80/17008
[2]	Takahashi H, Okazaki R, Ishiwata S, Taniguchi H, Okutani A, Hagiwara M and Terasaki I 2016 Nat. Commun. 7 12732 doi: 10.1038/ncomms12732
[3]	Dzero M, Sun K, Galitski V and Coleman P 2010 Phys. Rev. Lett. 104 106408 doi: 10.1103/PhysRevLett.104.106408
[4]	Fisk Z, Sarrao J L, Thompson J D, Mandrus D, Hundley M F, Miglori A, Bucher B, Schlesinger Z, Aeppli G, Bucher E, DiTusa J F, Oglesby C S, Ott H R, Canfield P C and Brown S E 1995 Physica B: Condens. Matter 206-207 798 doi: 10.1016/0921-4526(94)00588-M
[5]	Kasaya M, Iga F, Takigawa M and Kasuya T 1985 J. Magn. Magn. Mater. 47-48 429 doi: 10.1016/0304-8853(85)90458-5
[6]	Hundley M F, Canfield P C, Thompson J D, Fisk Z and Lawrence J M 1990 Phys. Rev. B 42 6842 doi: 10.1103/PhysRevB.42.6842
[7]	Appli G and Fisk Z 1992 Comments Condens. Matter Phys. 16 155
[8]	Schlesinger Z, Fisk Z, Zhang H T, Maple M B, DiTusa J and Aeppli G 1993 Phys. Rev. Lett. 71 1748 doi: 10.1103/PhysRevLett.71.1748
[9]	Fang Y, Ran S, Xie W, Wang S, Meng Y S and Maple M B 2018 Proc. Natl. Acad. Sci. 115 8558 doi: 10.1073/pnas.1806910115
[10]	Nishino Y, Kato M, Asano S, Soda K, Hayasaki M and Mizutani U 1997 Phys. Rev. Lett. 79 1909 doi: 10.1103/PhysRevLett.79.1909
[11]	Petrovic C, Kim J W, Bud'ko S L, Goldman A I, Canfield P C, Choe W and Miller G J 2003 Phys. Rev. B 67 155205 doi: 10.1103/PhysRevB.67.155205
[12]	Petrovic C, Lee Y, Vogt T, Lazarov N, Bud'ko S and Canfield P 2005 Phys. Rev. B 72 045103
[13]	Perucchi A, Degiorgi L, Hu R, Petrovic C and Mitrović V F 2006 Eur. Phys. J. B 54 175 doi: 10.1140/epjb/e2006-00433-1
[14]	Lukoyanov A V, Mazurenko V V, Anisimov V I, Sigrist M and Rice T M 2006 Eur. Phys. J. B 53 205 doi: 10.1140/epjb/e2006-00361-0
[15]	Takahashi H, Okazaki R, Yasui Y and Terasaki I 2011 Phys. Rev. B 84 205215 doi: 10.1103/PhysRevB.84.205215
[16]	Duong A T, Rhim S H, Shin Y, Nguyen V Q and Cho S 2015 Appl. Phys. Lett. 106 032106 doi: 10.1063/1.4905935
[17]	Jie Q, Hu R, Bozin E, Llobet A, Zaliznyak I, Petrovic C and Li Q 2012 Phys. Rev. B 86 115121 doi: 10.1103/PhysRevB.86.115121
[18]	Hu R, Thomas K J, Lee Y, Vogt T, Choi E S, Mitrović V F, Hermann R P, Grandjean F, Canfield P C, Kim J W, Goldman A I and Petrovic C 2008 Phys. Rev. B 77 085212 doi: 10.1103/PhysRevB.77.085212
[19]	Bentien A, Madsen G K H, Johnsen S and Iversen B B 2006 Phys. Rev. B 74 205105 doi: 10.1103/PhysRevB.74.205105
[20]	Tomczak J M, Haule K, Miyake T, Georges A and Kotliar G 2010 Phys. Rev. B 82 085104 doi: 10.1103/PhysRevB.82.085104
[21]	Battiato M, Tomczak J M, Zhong Z and Held K 2015 Phys. Rev. Lett. 114 236603 doi: 10.1103/PhysRevLett.114.236603
[22]	Du X, Tsai S W, Maslov D L and Hebard A F 2005 Phys. Rev. Lett. 94 166601 doi: 10.1103/PhysRevLett.94.166601
[23]	Li C Z, Li J G, Wang L X, Zhang L, Zhang J M, Yu D and Liao Z M 2016 ACS Nano 10 6020 doi: 10.1021/acsnano.6b01568
[24]	Mani A, Janaki J, Satya A T, Geetha Kumary T and Bharathi A 2012 J. Phys. Condens. Matter 24 075601 doi: 10.1088/0953-8984/24/7/075601
[25]	Kawabata A 1980 Solid State Commun. 34 431 doi: 10.1016/0038-1098(80)90644-4
[26]	Mani R G, Ghenim L and Choi J B 1991 Solid State Commun. 79 693 doi: 10.1016/0038-1098(91)90615-3
[27]	Morris R C, Christopher J E and Coleman R V 1969 Phys. Rev. 184 565 doi: 10.1103/PhysRev.184.565
[28]	Kim J, Ko C, Frenzel A, Ramanathan S and Hoffman J E 2010 Appl. Phys. Lett. 96 213106 doi: 10.1063/1.3435466
[29]	Pickett M D, Borghetti J, Yang J J, Medeiros-Ribeiro G and Williams R S 2011 Adv. Mater. 23 1730 doi: 10.1002/adma.201004497
[30]	Chudnovskii F A, Odynets L L, Pergament A L and Stefanovich G B 1996 J. Solid State Chem. 122 95 doi: 10.1006/jssc.1996.0087
[31]	Kim D J, Grant T and Fisk Z 2012 Phys. Rev. Lett. 109 096601 doi: 10.1103/PhysRevLett.109.096601
[32]	Hanias M, Anagnostopoulos A N, Kambas K and Spyridelis J 1991 Phys. Rev. B 43 4135 doi: 10.1103/PhysRevB.43.4135
[33]	Hanias M P and Anagnostopoulos A N 1993 Phys. Rev. B 47 4261 doi: 10.1103/PhysRevB.47.4261
[34]	Wolgast S, Kurdak Ç, Sun K, Allen J W, Kim D J and Fisk Z 2013 Phys. Rev. B 88 180405 doi: 10.1103/PhysRevB.88.180405
[35]	Li G, Xiang Z, Yu F, Asaba T, Lawson B, Cai P, Tinsman C, Berkley A, Wolgast S, Eo Y S, Kim D J, Kurdak C, Allen J W, Sun K, Chen X H, Wang Y Y, Fisk Z and Li L 2014 Science 346 1208 doi: 10.1126/science.1250366
[36]	Tan B S, Hsu Y T, Zeng B, Hatnean M C, Harrison N, Zhu Z, Hartstein M, Kiourlappou M, Srivastava A, Johannes M D, Murphy T P, Park J H, Balicas L, Lonzarich G G, Balakrishnan G and Sebastian S E 2015 Science 349 287 doi: 10.1126/science.aaa7974
[37]	Xiang Z, Kasahara Y, Asaba T, Lawson B, Tinsman C, Chen L, Sugimoto K, Kawaguchi S, Sato Y, Li G, Yao S, Chen Y L, Iga F, Singleton J, Matsuda Y and Li L 2018 Science 362 65 doi: 10.1126/science.aap9607
[38]	Thomas S M, Ding X, Ronning F, Zapf V, Thompson J D, Fisk Z, Xia J and Rosa P F S 2018 arXiv: 1806.00117
[39]	Murakawa H, Bahramy M S, Tokunaga M, Kohama Y, Bell C, Kaneko Y, Nagaosa N, Hwang H Y and Tokura Y 2013 Science 342 1490 doi: 10.1126/science.1242247
[40]	Liu Y, Yuan X, Zhang C, Jin Z, Narayan A, Luo C, Chen Z, Yang L, Zou J, Wu X, Sanvito S, Xia Z, Li L, Wang Z and Xiu F 2016 Nat. Commun. 7 12516 doi: 10.1038/ncomms12516
[41]	Windmiller L R 1966 Phys. Rev. 149 472 doi: 10.1103/PhysRev.149.472

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 41

相关文章 10

Metrics

本文评价

推荐阅读 0

[1]	Jing-Fen Zhao(赵敬芬), Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟). Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations[J]. 中国物理B, 2022, 31(1): 17302-017302.
[2]	Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy[J]. 中国物理B, 2021, 30(12): 127301-127301.
[3]	张真真, 符张龙, 郭旭光, 曹俊诚. 4.3 THz quantum-well photodetectors with high detection sensitivity[J]. 中国物理B, 2018, 27(3): 30701-030701.
[4]	赵虹, 彭丹丹, 何军, 李新梅, 龙孟秋. Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons[J]. 中国物理B, 2018, 27(10): 108504-108504.
[5]	冯申艳, 张巧璇, 杨洁, 雷鸣, 屈贺如歌. Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures[J]. 中国物理B, 2017, 26(9): 97401-097401.
[6]	张敏昊, 李焱, 宋凤麒, 王学锋, 张荣. Quantum oscillations and nontrivial transport in (Bi_0.92In_0.08)₂Se₃[J]. 中国物理B, 2017, 26(12): 127305-127305.
[7]	武德起, 丁武昌, 杨姗姗, 贾锐, 金智, 刘新宇. High performance oscillator with 2-mW output power at 300 GHz[J]. 中国物理B, 2014, 23(5): 57204-057204.
[8]	付振国, 王志刚, 李树深, 张平. Magnetic quantum oscillations in a monolayer graphene under a perpendicular magnetic field[J]. 中国物理B, 2011, 20(5): 58103-058103.
[9]	陈灵娜, 马松山, 欧阳方平, 伍小赞, 肖金, 徐慧. Negative differential resistance behaviour in N-doped crossed graphene nanoribbons[J]. 中国物理B, 2010, 19(9): 97301-097301.
[10]	张晓昕, 曾一平, 王晓光, 王保强, 朱占平. Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J]. 中国物理B, 2004, 13(9): 1560-1563.