中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57204-057204.doi: 10.1088/1674-1056/23/5/057204

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High performance oscillator with 2-mW output power at 300 GHz

武德起a, 丁武昌a, 杨姗姗a b, 贾锐a, 金智a, 刘新宇a   

  1. a Institute of Microelectrics, Chinese Academy of Sciences, Beijing 100029, China;
    b School of Physics and Electrical Information Science, Ningxia University, Yinchuan 750021, China
  • 收稿日期:2013-08-20 修回日期:2013-11-19 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

High performance oscillator with 2-mW output power at 300 GHz

Wu De-Qi (武德起)a, Ding Wu-Chang (丁武昌)a, Yang Shan-Shan (杨姗姗)a b, Jia Rui (贾锐)a, Jin Zhi (金智)a, Liu Xin-Yu (刘新宇)a   

  1. a Institute of Microelectrics, Chinese Academy of Sciences, Beijing 100029, China;
    b School of Physics and Electrical Information Science, Ningxia University, Yinchuan 750021, China
  • Received:2013-08-20 Revised:2013-11-19 Online:2014-05-15 Published:2014-05-15
  • Contact: Jia Rui E-mail:jiarui@ime.ac.cn
  • About author:72.80.Ey; 73.40.Lg; 73.61.Ey
  • Supported by:
    Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

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摘要： Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF (radio frequency) output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.

关键词: InP, transferred electron devices, terahertz wave, negative differential resistance

Abstract: Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF (radio frequency) output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.

Key words: InP, transferred electron devices, terahertz wave, negative differential resistance

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.61.Ey (III-V semiconductors)