中国物理B ›› 2018, Vol. 27 ›› Issue (3): 30701-030701.doi: 10.1088/1674-1056/27/3/030701

• TOPIC REVIEW—Thermal and thermoelectric properties of nano materials • 上一篇    下一篇

4.3 THz quantum-well photodetectors with high detection sensitivity

Zhenzhen Zhang(张真真), Zhanglong Fu(符张龙), Xuguang Guo(郭旭光), Juncheng Cao(曹俊诚)   

  1. 1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2 Ministry of Education and Shanghai Key Laboratory of Modern Optical System and Shanghai Terahertz Research Center, University of Shanghai for Science and Technology, Shanghai 200093, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-10-31 修回日期:2017-12-26 出版日期:2018-03-05 发布日期:2018-03-05
  • 通讯作者: Juncheng Cao E-mail:jccao@mail.sim.ac.cn
  • 基金资助:

    Project supported by the National Key R&D Program of China (Grant No. 2017YFF0106302), the National Basic Research Program of of China (Grant No. 2014CB339803), the National Natural Science Foundation of China (Grant Nos. 61404150, 61405233, and 61604161), and the Shanghai Municipal Commission of Science and Technology, China (Grant Nos. 15JC1403800, 17ZR1448300, and 17YF1429900).

4.3 THz quantum-well photodetectors with high detection sensitivity

Zhenzhen Zhang(张真真)1,3, Zhanglong Fu(符张龙)1, Xuguang Guo(郭旭光)2, Juncheng Cao(曹俊诚)1   

  1. 1 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2 Ministry of Education and Shanghai Key Laboratory of Modern Optical System and Shanghai Terahertz Research Center, University of Shanghai for Science and Technology, Shanghai 200093, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-10-31 Revised:2017-12-26 Online:2018-03-05 Published:2018-03-05
  • Contact: Juncheng Cao E-mail:jccao@mail.sim.ac.cn
  • Supported by:

    Project supported by the National Key R&D Program of China (Grant No. 2017YFF0106302), the National Basic Research Program of of China (Grant No. 2014CB339803), the National Natural Science Foundation of China (Grant Nos. 61404150, 61405233, and 61604161), and the Shanghai Municipal Commission of Science and Technology, China (Grant Nos. 15JC1403800, 17ZR1448300, and 17YF1429900).

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摘要：

We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector (QWP) device with a peak response frequency of 4.3 THz. The negative differential resistance (NDR) phenomenon is found in the dark current-voltage (I-V) curve in the current sweeping measurement mode, from which the breakdown voltage is determined. The photocurrent spectra and blackbody current responsivities at different voltages are measured. Based on the experimental data, the peak responsivity of 0.3 A/W (at 0.15 V, 8 K) is derived, and the detection sensitivity is higher than 1011 Jones, which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers. We attribute the high detection performance of the device to the small ohmic contact resistance of ~2Ω and the big breakdown bias.

关键词: terahertz quantum-well photodetector, negative differential resistance, detection sensitivity, photocurrent spectra

Abstract:

We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector (QWP) device with a peak response frequency of 4.3 THz. The negative differential resistance (NDR) phenomenon is found in the dark current-voltage (I-V) curve in the current sweeping measurement mode, from which the breakdown voltage is determined. The photocurrent spectra and blackbody current responsivities at different voltages are measured. Based on the experimental data, the peak responsivity of 0.3 A/W (at 0.15 V, 8 K) is derived, and the detection sensitivity is higher than 1011 Jones, which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers. We attribute the high detection performance of the device to the small ohmic contact resistance of ~2Ω and the big breakdown bias.

Key words: terahertz quantum-well photodetector, negative differential resistance, detection sensitivity, photocurrent spectra

中图分类号:  (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)

  • 07.20.Mc
73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems) 85.60.Gz (Photodetectors (including infrared and CCD detectors))