中国物理B ›› 2021, Vol. 30 ›› Issue (9): 94204-094204.doi: 10.1088/1674-1056/abe930

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GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

Yi Zhang(张一)1,2, Cheng-Ao Yang(杨成奥)1,2, Jin-Ming Shang(尚金铭)1,2, Yi-Hang Chen(陈益航)1,2, Tian-Fang Wang(王天放)1,2, Yu Zhang(张宇)1,2, Ying-Qiang Xu(徐应强)1,2, Bing Liu(刘冰)3, and Zhi-Chuan Niu(牛智川)1,2,3,†   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 收稿日期:2020-11-18 修回日期:2021-02-17 接受日期:2021-02-24 出版日期:2021-08-19 发布日期:2021-08-24
  • 通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790581) and the Key Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0303020001).

GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

Yi Zhang(张一)1,2, Cheng-Ao Yang(杨成奥)1,2, Jin-Ming Shang(尚金铭)1,2, Yi-Hang Chen(陈益航)1,2, Tian-Fang Wang(王天放)1,2, Yu Zhang(张宇)1,2, Ying-Qiang Xu(徐应强)1,2, Bing Liu(刘冰)3, and Zhi-Chuan Niu(牛智川)1,2,3,†   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • Received:2020-11-18 Revised:2021-02-17 Accepted:2021-02-24 Online:2021-08-19 Published:2021-08-24
  • Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • Supported by:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790581) and the Key Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0303020001).

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摘要： We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.

关键词: antimony, quantum well cascade, diode laser, molecular beam epitaxy

Abstract: We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.

Key words: antimony, quantum well cascade, diode laser, molecular beam epitaxy

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.50.-p (Quantum optics) 78.55.Cr (III-V semiconductors) 78.67.De (Quantum wells)