中国物理B ›› 2022, Vol. 31 ›› Issue (3): 38803-038803.doi: 10.1088/1674-1056/ac4022

所属专题： SPECIAL TOPIC — Emerging photovoltaic materials and devices

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An n—n type heterojunction enabling highly efficientcarrier separation in inorganic solar cells

Gang Li(李刚)1,2, Yuqian Huang(黄玉茜)1,2, Rongfeng Tang(唐荣风)1,2, Bo Che(车波)1,2, Peng Xiao(肖鹏)1,2, Weitao Lian(连伟涛)1,2, Changfei Zhu(朱长飞)1,2, and Tao Chen(陈涛)2,1,†   

  1. 1 Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China;
    2 Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230026, China
  • 收稿日期:2021-10-10 修回日期:2021-11-24 接受日期:2021-12-05 出版日期:2022-02-22 发布日期:2022-03-01
  • 通讯作者: Tao Chen E-mail:tchenmse@ustc.edu.cn
  • 基金资助:
    Project supported by Institute of Energy, Hefei Comprehensive National Science Center (Grant No. 21KZS212), the National Key Research and Development Program of China (Grant No. 2019YFA0405600), the National Natural Science Foundation of China (Grant Nos. U19A2092 and 22005293), the China Postdoctoral Science Foundation (Grant No. 2021M693045), and Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences.

An n—n type heterojunction enabling highly efficientcarrier separation in inorganic solar cells

Gang Li(李刚)1,2, Yuqian Huang(黄玉茜)1,2, Rongfeng Tang(唐荣风)1,2, Bo Che(车波)1,2, Peng Xiao(肖鹏)1,2, Weitao Lian(连伟涛)1,2, Changfei Zhu(朱长飞)1,2, and Tao Chen(陈涛)2,1,†   

  1. 1 Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China;
    2 Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230026, China
  • Received:2021-10-10 Revised:2021-11-24 Accepted:2021-12-05 Online:2022-02-22 Published:2022-03-01
  • Contact: Tao Chen E-mail:tchenmse@ustc.edu.cn
  • Supported by:
    Project supported by Institute of Energy, Hefei Comprehensive National Science Center (Grant No. 21KZS212), the National Key Research and Development Program of China (Grant No. 2019YFA0405600), the National Natural Science Foundation of China (Grant Nos. U19A2092 and 22005293), the China Postdoctoral Science Foundation (Grant No. 2021M693045), and Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences.

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摘要： Carrier separation in a solar cell usually relies on the p—n junction. Here we show that an n—n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications. The n—n type heterojunction was formed by hydrothermal deposition of Sb2(S,Se)3 and thermal evaporation of Sb2Se3. We found that the n—n junction is able to enhance the carrier separation by the formation of an electric field, reduce the interfacial recombination and generate optimized band alignment. The device based on this n—n junction shows 2.89% net efficiency improvement to 7.75% when compared with the device consisted of semiconductor absorber—metal contact. The study in the n—n type solar cell is expected to bring about more versatile materials utility, new interfacial engineering strategy and fundamental findings in the photovoltaic energy conversion process.

关键词: n—n junction, carrier separation, solar cell, antimony selenosulfide, thin film

Abstract: Carrier separation in a solar cell usually relies on the p—n junction. Here we show that an n—n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications. The n—n type heterojunction was formed by hydrothermal deposition of Sb2(S,Se)3 and thermal evaporation of Sb2Se3. We found that the n—n junction is able to enhance the carrier separation by the formation of an electric field, reduce the interfacial recombination and generate optimized band alignment. The device based on this n—n junction shows 2.89% net efficiency improvement to 7.75% when compared with the device consisted of semiconductor absorber—metal contact. The study in the n—n type solar cell is expected to bring about more versatile materials utility, new interfacial engineering strategy and fundamental findings in the photovoltaic energy conversion process.

Key words: n—n junction, carrier separation, solar cell, antimony selenosulfide, thin film

中图分类号:  (Efficiency and performance of solar cells)

  • 88.40.hj
78.67.Qa (Nanorods) 73.40.-c (Electronic transport in interface structures) 81.20.-n (Methods of materials synthesis and materials processing)